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PDMB400BS12

Description
IGBT Module-Dual
File Size279KB,4 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
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PDMB400BS12 Overview

IGBT Module-Dual

QS043-402-20373(2/5)
IGBT
M½½½½½-D½½½
□ 回 路 図 :
CIRCUIT
PDMB400BS12
400 A,1200V
PDMB400BS12C
108
93
± 0 .2 5
14 11 14 11 14
□ 外 ½ 寸 法 図 :
OUTLINE DRAWING
110
93
± 0 .2 5
14 11 14 11 14
3-M6
4-Ø6.5
3-M6
4-Ø 6.5
11
62
11 13
20
80
13
20
6
15 6
62
± 0 .2 5
6
6
5(E1)
4(G1)
4
25
25
16
9
16
25
24
25
9
16
24
16
8
9
16
9
16
8
30
- 0.5
+1.0
- 0.5
+1.0
23
30
PDMB400BS12
□ 最 大 定 格 :
MAXIMUM
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
コ レ ク タ 電 流
Collector Current
コ レ ク タ 損 失
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
圧(Terminal to Base AC,1½inute)
Isolation Voltage
Module Base to Heatsink
締 め 付 け ト ル ク
Mounting Torque
Busbar to Main Terminal
□ 電 気 的 特 性
DC
1½½
7
PDMB400BS12C
Dimension:[mm½
RATINGS
(T
=25℃)
S½½½½½
CES
GES
CP
½
½½½
ISO
½½½
R½½½½
V½½½½
U½½½
(RMS)
N・½
(kgf½cm)
I½½½
1,200
±20
400
800
2,400
-40½+150
-40½+125
2,500
3(30.6)
ELECTRICAL CHARACTERISTICS
(T
=25℃)
S½½½½½
CES
GES
CE(½½½)
GE(½½)
½½½
上 昇 時 間
ターンオン時間
下 降 時 間
ターンオフ時間
Rise
Turn-on
Fall
Turn-off
Time
Time
Time
Time
½
½
½
½½
½
½
½
½½½
T½½½ C½½½½½½½½
CE
= 1200V,V
GE
= 0V
GE
= ±20V,V
CE
= 0V
= 400A,V
GE
= 15V
CE
= 5V,I
= 400mA
CE
= 10V,V
GE
= 0V,½= 1MH
CC
= 600V
L
= 1.5Ω
G
= 3.9Ω
GE
= ±15V
M½½.
4.0
T½½.
2.3
25,200
0.25
0.40
0.25
0.80
M½½.
4.0
1.0
2.7
8.0
0.45
0.70
0.35
1.10
U½½½
½A
μA
½F
C½½½½½½½½½½½½½
コ レ ク タ 遮 断 電 流
Collector-Emitter Cut-Off Current
ゲ ー ト 漏 れ 電 流
Gate-Emitter Leakage Current
コレクタ・エミッタ間½和電圧
Collector-Emitter Saturation Voltage
ゲ ー ト し き い 値 電 圧
Gate-Emitter Threshold Voltage
Input Capacitance
スイッチング時間
Switching Time
7
23
LABEL
LABEL
6
5
5
4
15 6
48
± 0 .2 5
(C2E1)
1
(E2)
2
(C1)
3
7(G2)
6(E2)
1
2
3
7
1
2
3
7
μ½
□フリーホイーリングダイオードの 特 性:
FREE
I½½½
Forward Current
C½½½½½½½½½½½½½
Peak Forward Voltage
逆 回 復 時 間
Reverse Recovery Time
WHEELING DIODE RATINGS & CHARACTERISTICS
(T
=25℃)
S½½½½½
FM
S½½½½½
½
½½
R½½½½ V½½½½
400
800
T½½½ C½½½½½½½½
= 400A,V
GE
= 0V
= 400A,V
GE
= -10V
½i/½t= 800A/μs
M½½.
T½½.
2.2
0.2
M½½.
2.6
0.3
U½½½
DC
1½½
U½½½
μ½
□ 熱 的 特 性 :
THERMAL CHARACTERISTICS
C½½½½½½½½½½½½½
IGBT
Thermal Impedance
Diode
S½½½½½
Rth(j-c)
T½½½ C½½½½½½½½
Junction to Case
M½½.
T½½.
M½½. U½½½
0.052
℃/W
0.
107
01
日本インター株式会社

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