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PHMB400E6

Description
IGBT Module-Dual
CategoryDiscrete semiconductor    The transistor   
File Size237KB,4 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric View All

PHMB400E6 Overview

IGBT Module-Dual

PHMB400E6 Parametric

Parameter NameAttribute value
MakerNihon Inter Electronics Corporation
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X4
Contacts4
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)400 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)400 ns
Nominal on time (ton)300 ns
QS043-402-20393(2/5)
IGBT
M½½½½½-S½½½½½
□ 回 路 図 :
CIRCUIT
400A,600V
□ 外 ½ 寸 法 図 :
OUTLINE DRAWING
PHMB400E6
4 - Ø6.5
2 -M6
108
93
9
(E)
4
(G)
3
48
4
20
3
2 -M4
24
11
20
29
25.5
7
23
LABEL
13
14
16
62
(E)
2
(C)
1
2
1
Dimension:[mm½
□ 最 大 定 格 :
MAXIMUM
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
コ レ ク タ 電 流
Collector Current
コ レ ク タ 損 失
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
圧(Terminal to Base AC,1½inute)
Isolation Voltage
Module Base to Heatsink
締 め 付 け ト ル ク
Mounting Torque
Busbar to Main Terminal
□ 電 気 的 特 性
DC
1½½
RATINGS
(T
=25℃)
S½½½½½
CES
GES
CP
½
½½½
ISO
R½½½½ V½½½½
600
±20
400
800
1470
-40½+150
-40½+125
2,500
3(30.6)
½½½
M4
M6
1.4(14.3)
3(30.6)
N・½
(kgf½cm)
U½½½
(RMS)
I½½½
ELECTRICAL CHARACTERISTICS
(T
=25℃)
S½½½½½
CES
GES
CE(½½½)
GE(½½)
½½½
上 昇 時 間
ターンオン時間
下 降 時 間
ターンオフ時間
Rise
Turn-on
Fall
Turn-off
Time
Time
Time
Time
½
½
½
½½
½
½
½
½½½
T½½½ C½½½½½½½½
CE
= 600V,V
GE
= 0V
GE
= ±20V,V
CE
= 0V
= 400A,V
GE
= 15V
CE
= 5V,I
= 400mA
CE
= 10V,V
GE
= 0V,½= 1MH
CC
=
=
=
GE
=
300V
0.75Ω
3.0Ω
±15V
M½½.
4.0
T½½.
2.1
20,000
0.15
0.30
0.10
0.40
M½½.
1.0
1.0
2.6
8.0
0.35
0.85
0.25
0.80
U½½½
½A
μA
½F
C½½½½½½½½½½½½½
コ レ ク タ 遮 断 電 流
Collector-Emitter Cut-Off Current
ゲ ー ト 漏 れ 電 流
Gate-Emitter Leakage Current
コレクタ・エミッタ間½和電圧
Collector-Emitter Saturation Voltage
ゲ ー ト し き い 値 電 圧
Gate-Emitter Threshold Voltage
Input Capacitance
スイッチング時間
Switching Time
μ½
□フリーホイーリングダイオードの 特 性:
FREE
I½½½
Forward Current
C½½½½½½½½½½½½½
Peak Forward Voltage
逆 回 復 時 間
Reverse Recovery Time
WHEELING DIODE RATINGS & CHARACTERISTICS
(T
=25℃)
S½½½½½
FM
S½½½½½
½
½½
R½½½½ V½½½½
400
800
T½½½ C½½½½½½½½
= 400A,V
GE
= 0V
= 400A,V
GE
= -10V
½i/½t= 800A/μs
M½½.
T½½.
1.9
0.15
M½½.
2.4
0.25
U½½½
DC
1½½
U½½½
μ½
□ 熱 的 特 性 :
THERMAL CHARACTERISTICS
C½½½½½½½½½½½½½
IGBT
Thermal Impedance
Diode
S½½½½½
Rth(j-c)
T½½½ C½½½½½½½½
Junction to Case
(Tc測定点チップ直下)
M½½.
T½½.
M½½.
0 8
.0 5
0.20
U½½½
℃/W
00
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