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PHMB800BS12

Description
IGBT Module-Dual
CategoryDiscrete semiconductor    The transistor   
File Size291KB,4 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric View All

PHMB800BS12 Overview

IGBT Module-Dual

PHMB800BS12 Parametric

Parameter NameAttribute value
MakerNihon Inter Electronics Corporation
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X4
Contacts4
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)800 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)800 ns
Nominal on time (ton)400 ns
(2/5)
IGBT
M½½½½½-D½½½
□ 回 路 図 :
CIRCUIT
800
A,
1200V
□ 外 ½ 寸 法 図 :
OUTLINE DRAWING
PHMB800BS12
110
93
± 0 .2 5
4
4 - Ø6.5
2 -M8
(E)
4
(G)
3
2
3
2 -M4
13
21
29
- 0.5
36
+1.0
+1.0
25.5
- 0.5
7
23
LABEL
20
20
62
± 0 .2 5
80
(E)
2
(C)
1
1
Dimension:[mm½
□ 最 大 定 格 :
MAXIMUM
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
コ レ ク タ 電 流
Collector Current
コ レ ク タ 損 失
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
圧(Terminal to Base AC,1½inute)
Isolation Voltage
Module Base to Heatsink
締 め 付 け ト ル ク
Mounting Torque
Busbar to Terminals
□ 電 気 的 特 性
DC
1½½
RATINGS
(T
=25℃)
S½½½½½
CES
GES
CP
½
½½½
ISO
½½½
R½½½½
V½½½½
U½½½
(RMS)
N・½
(kgf½cm)
I½½½
1,200
±20
800
1,600
4,800
-40½+150
-40½+125
2,500
3(30.6)
M4
M8
1.4(14.3)
10.5( 1 0 7 )
ELECTRICAL CHARACTERISTICS
(T
=25℃)
S½½½½½
CES
GES
CE(½½½)
GE(½½)
½½½
上 昇 時 間
ターンオン時間
下 降 時 間
ターンオフ時間
Rise
Turn-on
Fall
Turn-off
Time
Time
Time
Time
½
½
½
½½
½
½
½
½½½
T½½½ C½½½½½½½½
CE
= 1200V,V
GE
= 0V
GE
= ±20V,V
CE
= 0V
= 800A,V
GE
= 15V
CE
= 5V,I
= 800mA
CE
= 10V,V
GE
= 0V,½= 1MH
CC
= 600V
L
= 0.75Ω
G
= 2.0Ω
GE
= ±15V
M½½.
4.0
T½½.
2.3
50,400
0.25
0.40
0.25
0.80
M½½.
8.0
1.0
2.7
8.0
0.45
0.70
0.35
1.10
U½½½
½A
μA
½F
C½½½½½½½½½½½½½
コ レ ク タ 遮 断 電 流
Collector-Emitter Cut-Off Current
ゲ ー ト 漏 れ 電 流
Gate-Emitter Leakage Current
コレクタ・エミッタ間½和電圧
Collector-Emitter Saturation Voltage
ゲ ー ト し き い 値 電 圧
Gate-Emitter Threshold Voltage
Input Capacitance
スイッチング時間
Switching Time
μ½
□フリーホイーリングダイオードの 特 性:
FREE
I½½½
Forward Current
C½½½½½½½½½½½½½
Peak Forward Voltage
逆 回 復 時 間
Reverse Recovery Time
WHEELING DIODE RATINGS & CHARACTERISTICS
(T
=25℃)
S½½½½½
FM
S½½½½½
½
½½
R½½½½ V½½½½
800
1,600
T½½½ C½½½½½½½½
= 800A,V
GE
= 0V
= 800A,V
GE
= -10V
½i/½t= 1600A/μs
M½½.
T½½.
2.2
0.2
M½½.
2.6
0.3
U½½½
DC
1½½
U½½½
μ½
□ 熱 的 特 性 :
THERMAL CHARACTERISTICS
C½½½½½½½½½½½½½
IGBT
Thermal Impedance
Diode
S½½½½½
Rth(j-c)
T½½½ C½½½½½½½½
Junction to Case
M½½.
T½½.
M½½. U½½½
0.040
℃/W
0.
540
00
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