ECO-PAC
TM
2
Power MOSFET
in ECO-PAC 2
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
PSHM 120/01
L4
L6
L9
P18
R18
A1
E10
F10
K12
NTC
K13
I
D25
V
DSS
R
DSon
t
rr
= 75 A
= 100 V
= 25 mΩ
Ω
<
200 ns
Preliminary Data Sheet
MOSFETs
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
Symbol
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Test Conditions
Maximum Ratings
100
100
±20
±30
75
300
75
30
5
300
V
V
V
V
A
A
A
mJ
V/ns
W
Features
• HiPerFET
TM
technology
- low R
DSon
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
• ECO-PAC 2 package
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- solderable pins for PCB mounting
• UL registered, E 148688
Applications
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
100
2.0
4
±100
250
1
25
25
30
4500
1600
800
20
60
80
60
180
36
85
0.25
30
110
110
90
260
70
160
0.5
V
V
nA
µA
mA
m
Ω
S
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
; T
J
= 25°C
V
GS
= 0 V;
T
J
= 125°C
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t < 300 µs, duty cycle d < 2%
V
DS
= 10 V; I
D
= I
D25
, pulse test
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
• drives and power supplies
• battery or fuel cell powered
pF
• automotive, industrial vehicle etc.
pF
pF
• secondary side of mains power
supplies
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
Ω,
(External)
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
nC
nC
nC
K/W
K/W
with heatsink compound (0.42 K/m.K; 50 µm)
Caution:
These Devices are sensitive to electrostatic discharge. Users
should observe proper ESD handling precautions.
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PAC
TM
2
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Test Conditions
V
GS
= 0 V
Repetitive;
I
F
= I
D25
, V
GS
= 0 V,
Pulse test, t < 300 µs, duty cycle d < 2%
I
F
= 25 A, -di/dt = 100 A/µs, T
J
= 25°C
V
R
= 25 V
T
J
= 125°C
300
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
75
300
1.75
200
A
A
V
ns
ns
Dimensions in mm (1 mm = 0.0394")
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Characteristic Values
min. typ. max.
4.75
5.0
3375
5.25 kΩ
K
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
I
ISOL
≤
1 mA; 50/60 Hz; t = 1 s
Mounting torque (M4)
Max. allowable acceleration
Conditions
Maximum Ratings
-40...+150
-40...+125
3600
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s
2
Symbol
d
S
d
A
Weight
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
Characteristic Values
min. typ. max.
11.2
11.2
24
mm
mm
g
Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PAC
TM
2
200
T
J
= 25°C
V
GS
= 10V
9V
150
125
150
8V
I
D
- Amperes
100
75
50
25
0
T
J
= 125°C
100
7V
6V
50
0
5V
T
J
= 25°C
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Volts
V
GS
- Volts
Fig. 1 Output Characteristics
1,4
T
J
= 25°C
Fig. 2 Input Admittance
2,50
2,25
1,3
R
DS(on)
- Normalized
2,00
1,75
1,50
1,25
1,00
0,75
I
D
= 37.5A
1,2
V
GS
= 10V
1,1
1,0
V
GS
= 15V
0,9
0,8
0
20
40
60
80
100 120 140 160
0,50
-50
-25
0
25
50
75
100 125 150
I
D
- Amperes
T
J
- Degrees C
Fig. 3 R
DS(on)
vs. Drain Current
80
Fig. 4 Temperature Dependence
of Drain to Source Resistance
1,2
60
BV/V
G(th)
- Normalized
1,1
1,0
0,9
0,8
0,7
0,6
0,5
-50
V
GS(th)
BV
DSS
40
20
0
-50
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
T
C
- Degrees C
T
J
- Degrees C
Fig. 5 Drain Current vs. Case Temperature
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PAC
TM
2
10
9
8
7
6
5
GS
V
DS
= 50V
I
D
= 37.5A
I
G
= 1mA
Limited by R
DS(on)
10
1
100
I
D
- Amperes
1m
4
3
2
1
0
0
25
50
75
100 125 150 175 200
10
1
10
1
1
10
100
Gate Charge - nCoulombs
V
DS
- Volts
Fig.7 Gate Charge Characteristic Curve
6000
5000
150
125
Fig.8 Forward Bias Safe Operating Area
3000
2000
1000
0
f = 1MHz
V
DS
= 25V
C
oss
I
S
- Amperes
4000
C
iss
100
75
50
T
J
= 125°C
25
C
rss
T
J
= 25°C
0
5
10
15
20
25
0
0,00
0,25
0,50
0,75
1,00
1,25
1,50
V
DS
- Volts
V
SD
- Volt
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
D=0.5
0,1
D=0.2
D=0.1
D=0.05
0,01
D=0.02
D=0.01
Single pulse
0,001
0,00001
0,0001
0,001
0,01
0,1
1
10
Fig.11 Transient Thermal Impedance
Time - Seconds
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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