ECO-PAC
TM
2
CoolMOS Power MOSFET
PSHM 40D/06
in ECO-PAC 2
N-Channel Enhancement Mode
Low R
DSon
, High V
DSS
MOSFET
Package with Electrically Isolated Base
I
D25
V
DSS
R
DSon
= 38 A
= 600 V
= 70 mΩ
Ω
1)
L4
L6
L9
P18
R18
K12
F10
NTC
K13
Preliminary Data Sheet
MOSFET
Symbol
V
DSS
V
GS
I
D25
I
D90
dv/dt
E
AS
E
AR
Conditions
T
VJ
= 25°C to 150°C
T
C
= 25°C
T
C
= 90°C
V
DS
< V
DSS
; I
F
≤
50A;di
F
/dt≤ 200A/µs
T
VJ
= 150°C
I
D
= 10 A; L = 36 mH; T
C
= 25°C
I
D
= 20 A; L = 5 µH; T
C
= 25°C
Maximum Ratings
600
V
±20
V
38
A
25
A
6
V/ns
1.8
1
J
mJ
Features
•
ECO-PAC 2 with DCB Base
- Electrical isolation towards the
heatsink
- Low coupling capacitance to the heatsink
for reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- solderable pins for DCB mounting
fast CoolMOS power MOSFET - 2
nd
generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
Enhanced total power density
UL registered, E148688
•
Symbol
Conditions
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
R
thJC
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
V
GS
= 10 V; I
D
= I
D90
70 m
Ω
V
DS
= 20 V; I
D
= 3 mA;
3.5
5.5
V
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25°C
25 µA
T
VJ
= 125°C
60
µA
V
GS
= ±20 V; V
DS
= 0 V
100 nA
220
nC
55
nC
V
GS
= 10 V; V
DS
= 350 V; I
D
= 50 A
125
nC
30
ns
95
ns
V
GS
= 10 V; V
DS
= 380 V;
100
ns
I
D
= 25 A; R
G
= 1.8
Ω
10
ns
(reverse conduction) I
F
= 20 A; V
GS
= 0 V
0.9
1.1
V
per MOSFET
0.45 K/W
•
•
Applications
•
•
•
•
•
•
•
•
•
•
1)
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
Inductive heating
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated
Caution:
These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
CoolMOS is a trademark of Infineon Technologies AG.
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PAC
TM
2
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
18.5
A
12.0
A
Dimensions in mm (1 mm = 0.0394")
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
Characteristic Values
min.
typ. max.
I
F
= 15 A; T
VJ
= 25°C
2.58 2.64
V
T
VJ
= 125°C
1.8
V
I
F
= 10 A; di
F
/dt = 400 A/µs; T
VJ
= 125°C
7
A
V
R
= 300 V; V
GE
= 0 V
70
ns
3.5 K/W
with heatsink compound (0.42 K/m.K; 50 µm)
7
K/W
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Characteristic Values
min. typ. max.
4.75
5.0
5.25 kΩ
3375
K
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
Conditions
Maximum Ratings
-40...+150
-40...+125
3600
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s
2
I
ISOL
≤
1 mA; 50/60 Hz; t = 1 s
Mounting torque (M4)
Max. allowable acceleration
Conditions
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
Characteristic Values
min. typ. max.
11.2
mm
11.2
mm
24
g
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
FPGA/CPLD
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