ECO-PAC 2
TM
IGBT Module
Sixpack
Preliminary Data Sheet
S9
L9
N5
A5
A1
F3
G1
PSII 24/06*
I
C25
= 19 A
V
CES
= 600 V
V
CE(sat)typ.
= 1.9 V
X18
W14
H5
K10
K12
N9
R5
D5
C1
K13
PSII 24/06*
*NTC optional
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 82
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= 720 V; V
GE
= ±15 V; R
G
= 82
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
600
± 20
19
14
20
V
CES
10
73
µs
W
V
V
A
A
A
Features
•
•
•
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
1.9
2.2
4.5
2.7
100
35
35
230
30
0.4
0.3
600
39
3.4
2.4
6.5
0.6
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
1.7 K/W
K/W
•
•
•
NPT IGBT’s
- positive temperature coefficient of
saturation voltage
- fast switching
FRED diodes
- fast reverse recovery
- low forward voltage
Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plat
e
UL registered, E 148688
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
I
C
= 10 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.35 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
Applications
AC drives
power supplies with power factor
correction
Advantages
V
CE
= 0 V; V
GE
= ± 20 V
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 82
Ω
•
•
•
•
•
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300 V; V
GE
= 15 V; I
C
= 10 A
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
Caution:
These devices are
sensitive to electrostatic discharge.
Users should observe proper ESD
handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSII 24/06
Diodes
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
21
14
A
A
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
I
F
= 10 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 10 A; di
F
/dt = -400 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Characteristic Values
min.
typ. max.
1.9
1.4
11
80
7.0
2.1
V
V
A
ns
3.5 K/W
K/W
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Characteristic Values
min. typ. max.
4.75
5.0
3375
5.25 kΩ
K
Component
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
I
ISOL
≤
1 mA; 50/60 Hz; t = 1 s
Mounting torque (M4)
Max. allowable acceleration
Conditions
Maximum Ratings
-40...+150
-40...+125
3600
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s
2
Symbol
d
S
d
A
Weight
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
Characteristic Values
min. typ. max.
11.2
11.2
24
mm
mm
g
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSII 24/06
IGBT
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSII 24/06
IGBT
Transient thermal resistance junction to heatsink
10
(Z
thJH
is measured using 50 µm
thermal grease)
1
IGBT
Z
thJH
[K/W]
D=0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
0.001
100
t (s)
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSII 24/06
Diode
30
A
25
I
F
20
15
10
5
0
0.0
T
VJ
=150°C
T
VJ
=100°C
T
VJ
= 25°C
1.4
T = 100°C
nC
VJ
V = 300V
1.2
R
Q
r
1.0
0.8
0.6
0.4
0.2
0.0
100
I
RM
40
T
VJ
= 100°C
A
V
R
= 300V
30
I
F
= 20A
I
F
= 10A
I
F
= 5A
I
F
= 20A
I
F
= 10A
I
F
= 5A
20
10
0.5
1.0
1.5
V
F
2.0 V 2.5
A/µs 1000
-di
F
/dt
0
0
200
400
600 A/µs 1000
800
-di
F
/dt
Forward current I
F
versus V
F
Reverse recovery charge Q
r
versus -di
F
/dt
120
ns
110
100
I
F
= 20A
I
F
= 10A
I
F
= 5A
T
VJ
= 100°C
V
R
= 300V
Peak reverse current I
RM
versus -di
F
/dt
20
V
V
FR
15
t
fr
V
FR
2.0
1.2
µs
0.9
t
fr
1.5
K
f
1.0
I
RM
t
rr
90
80
10
0.6
0.5
Q
r
5
T
VJ
= 100°C
I
F
= 10A
0.3
70
0.0
0
40
80
120 °C 160
T
VJ
0
200
400
600
-di
F
/dt
800
A/µs 1000
0
0
200
400
0.0
600 A/µs 1000
800
di
F
/dt
8-06A
Dynamic parameters Q
r
, I
RM
versus T
VJ
Recovery time t
rr
versus -di
F
/dt
Peak forward voltage V
FR
and t
fr
versus di
F
/dt
10
Transient thermal resistance junction to heatsink
(Z
thJH
is measured using 50 µm
thermal grease)
1
D=0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Fred
Z
thJH
[K/W]
0.1
0.01
0.001
t(s)
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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