IGBT Module
Preliminary Data Sheet
S15
R15
A15
A7
A9
D1
A1
U1
V1
PSII 50/06*
I
C80
=
V
CES
=
V
CE(sat)typ.
=
ECO-TOP
TM
1
48 A
600 V
2.3 V
G15
V12
V13
K1
G1
V3
V6
N15
V9
V10
Q1
N1
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
Conditions
Maximum Ratings
600
T
VJ
= 25°C to 150°C
V
typical picture, for pin
configuration see outline
drawing
*NTC optional
± 20
V
T
C
= 25°C
T
C
= 80°C
69
48
A
A
V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
100
V
CES
A
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
10
µs
W
208
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.3
2.8
2.8
I
C
= 75 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
V
4.5
6.5
V
Package with DCB ceramic
base plate
Isolation voltage 3000 V
∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL Release applied
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.8
4.4
mA
mA
Applications
V
CE
= 0 V; V
GE
= ± 20 V
100
nA
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 40 A
V
GE
= 15/0 V; R
G
= 22
Ω
50
55
300
30
1.8
1.4
2.8
1.2
ns
ns
ns
ns
mJ
mJ
AC and DC motor control
AC servo and robot drives
Power supplies
Welding inverters
Advantages
Easy to mount with four screws
Space and weight savings
Improved temperature and
power cycling capability
High power density
Small and light weight
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
nF
0.6 K/W
K/W
Caution:
These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 40 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 30 A; di
F
/dt = 500 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Maximum Ratings
56
35
A
A
Characteristic Values
min.
typ. max.
2.32
1.58
15
70
2.59
V
V
A
ns
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
Conditions
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M5)
Max. allowable acceleration
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
t
e
e
h
r
s
a nde
t
a u
d ll
t
e ti
n
iv t s
t
e
ta uc
m
p
tn d
lo
ro eve
p d
2.6
1.3 K/W
K/W
Characteristic Values
min. typ. max.
4.75
5.0
3375
5.25 kΩ
K
Maximum Ratings
-40...+125
-40...+150
3000
°C
°C
V~
3
26
50
Nm
lb.in.
m/s
2
Characteristic Values
min. typ. max.
11.2
11.2
mm
mm
g
86
Package style and outline
Dimensions in mm (1mm = 0.0394“)
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
150
A
120
V
GE
= 17 V
15 V
13 V
150
A
120
90
11V
V
GE
= 17 V
15 V
13 V
I
C
I
C
90
60
30
0
11V
T
VJ
= 125°C
T
VJ
= 25°C
9V
60
30
0
9V
42T60
42T60
0
1
Fig. 1 Typ. output characteristics
150
A
120
I
C
90
60
30
0
T
VJ
= 125°C
4
6
Fig. 3 Typ. transfer characteristics
20
V
15
V
GE
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
2
3
4
5
V
6
0
1
2
3
4
5
V
6
V
CE
V
CE
Fig. 2 Typ. output characteristics
90
A
75
60
45
30
15
V
CE
= 20 V
I
F
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
42T60
0
42T60
8
10
12
14
V
16
0,0
0,5
1,0
1,5
V
2,0
V
GE
V
F
Fig. 4 Typ. forward characteristics of
free wheeling diode
150
120
ns
90
T
VJ
= 125°C
V
R
= 300 V
I
F
= 30 A
I
RM
50
40
A
30
20
10
V
CE
= 300 V
I
C
= 50 A
I
RM
t
rr
t
rr
60
30
42T60
5
10
42T60
0
0
0
40
80
120
Q
G
nC
160
0
200
400
600
-di/dt
800
A/µs
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
10,0
mJ
E
on
t
d(on)
100
ns
75
t
E
off
4
mJ
E
off
400
ns
300
t
7,5
t
r
3
5,0
50
V
CE
= 300 V
V
GE
= ±15 V
2
t
d(off)
V
CE
= 300 V
V
GE
= ±15 V
R
G
= 22
Ω
T
VJ
= 125°C
200
2,5
E
on
R
G
= 22
Ω
T
VJ
= 125°C
42T60
25
1
100
t
f
0,0
0
Fig. 7 Typ. turn on energy and switching
4
mJ
E
on
3
2
1
0
10
Fig. 9 Typ. turn on energy and switching
120
A
I
CM
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
40
80
A
120
0
0
42T60
0
40
I
C
80
I
C
A
0
120
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
600
ns
400
t
t
d(on)
E
on
t
r
80
ns
3
mJ
60
t
E
off
2
E
off
t
d(off)
V
CE
= 300 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
40
1
V
CE
= 300 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
200
42T60
20
30
40
50
Ω
60
20
0
t
f
42T60
0
10
20
30
40
50
Ω
60
0
R
G
R
G
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
10
K/W
1
diode
IGBT
90
R
G
= 22
Ω
T
VJ
= 125°C
Z
thJC
0,1
0,01
60
30
0,001
42T60
single pulse
0
0
100
200
300
400
500
600
V
CE
700
V
0,0001
0,00001 0,0001 0,001
VID...75-06P1
0,01
0,1
t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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