ECO-PAC
TM
2
IGBT Module
Preliminary Data Sheet
PSIIX 20/12
I
C25
= 28 A
= 1200 V
V
CES
V
CE(sat)typ.
= 2.1 V
O9
P9
L9
A5
C5
A1
C1
G10
H10
S18
E5
G14
E1
W18
I14
K14
K10
PSIIX 20/12
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Conditions
T
VJ
= 25°C to 150°C
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 56
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= 900 V; V
GE
= ±15 V; R
G
= 56
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Maximum Ratings
1200
± 20
28
17
45
V
CES
10
100
µs
W
V
V
A
A
A
Features
•
•
•
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
•
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Q
Gon
R
thJC
R
thJH
I
C
= 16 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.4 mA; V
GE
= V
CE
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
= ± 20 V
V
CE
= V
CES
;
5.5
1.8
2.1
0.01
0.1
70
40
250
100
1.55
1.7
47
tbd
2.1
6.5
0.1
V
V
V
•
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 15 A
V
GE
= ±15 V; R
G
= 56
Ω
V
CE
= 600 V; V
GE
= 15 V; I
C
= 15 A
(per IGBT)
(per IGBT) with heatsink compound
mA
mA
Applications
500 nA
•
AC drives
ns
•
power supplies with power factor
ns
correction
ns
n s
Advantages
Easy to mount with two screws
mJ
•
Space and weight savings
mJ
•
•
Improved temperature and power
cycling capability
nC
High power density
1.3 K/W
•
Small and light weight
K/W
•
Easy paralleling due to the
positive temperature coefficient of
the on-state voltage
Rugged XPT design (Xtreme light
Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x I
C
- low EMI
Thin wafer technology combined
with the XPT design results in a
competitive low
V
CE(sat)
Industry Standard Package
- solderable pins for PCB
mounting
- isolated DCB ceramic base
plat
e
UL release applied
Caution:
These devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
©
2009 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0
email: info@powersem.de
FAX: 09122 - 9764 - 20
PSIIX 20/12
Diodes
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
33
22
A
A
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Conditions
I
F
= 20 A; T
VJ
= 25°C
T
VJ
= 150°C
I
F
= 20 A; di
F
/dt = -750 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
(per diode)
(per diode) with heatsink compound
Characteristic Values
min. typ. max.
1,8
2,2
tbd
tbd
tbd
2,2
V
V
A
ns
1,5 K/W
K/W
Component
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
I
ISOL
≤
1 mA; 50/60 Hz; t = 1 s
Mounting torque (M4)
Max. allowable acceleration
Conditions
Maximum Ratings
-40...+150
-40...+125
3600
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s
2
Tolerances: +/- 0,3 mm
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
Characteristic Values
min. typ. max.
11.2
11.2
24
mm
mm
g
©
2009 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 email: info@powersem.de
FAX: 09122 - 9764 - 20
PSIIX 20/12
30
25
20
I
C
[A]
V
GE
= 15 V
30
25
20
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
V
GE
= 15 V
17 V
19 V
13 V
11 V
15
10
5
0
0
I
C
[A]
15
10
5
0
9V
1
2
V
CE
[V]
3
0
1
2
3
V
CE
[V]
4
5
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
20
I
C
= 15 A
V
CE
= 600 V
15
30
25
20
I
C
15
[A]
V
GE
[V]
10
10
5
0
5
6
7
8
9
V
GE
[V]
Fig. 3 Typ. tranfer characteristics
T
VJ
= 125°C
T
VJ
= 25°C
5
0
10 11 12 13
0
10
20
30
Q
G
[nC]
40
50
60
Fig. 4 Typ. turn-on gate charge
4
R
G
= 56
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
2.8
E
on
I
C
= 15 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
3
2.4
E
off
E
E
[mJ]
2
2.0
[mJ]
E
off
E
on
1
1.6
0
0
5
10
15
20
25
30
35
I
C
[A]
Fig. 5 Typ. switching energy vs. collector current
1.2
40
60
80
100
120
140
160
R
G
[ ]
Fig. 6 Typ. switching energy vs. gate resistance
©
2009 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 email: info@powersem.de FAX: 09122 - 9764 - 20
Embedded System
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