Thyristor Modules
Thyristor/Diode Modules
Preliminary Data Sheet
PSKT 162
PSKH 162
I
TRMS
I
TAVM
V
RRM
= 2x 300 A
= 2x 190 A
= 800-1800 V
V
RSM
V
DSM
V
900
1300
1500
1700
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
Type
Version 1
PSKT
PSKT
PSKT
PSKT
PSKT
162/08io1
162/12io1
162/14io1
162/16io1
162/18io1
Version 1
PSKH 162/08io1
PSKH 162/12io1
PSKH 162/14io1
PSKH 162/16io1
PSKH 162/18io1
1
2
3
6
7
5
4
Symbol
I
TRMS
, I
FRMS
I
TAVM
, I
FAVM
I
TSM
, I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 80°C; 180° sine
T
C
= 85°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
300
190
181
6000
6400
5250
5600
180 000
170 000
137 000
128 000
150
500
1000
120
60
8
10
-40...+125
125
-40...+125
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/µs
●
●
3
6 7 1
5 4 2
PSKT
3
1
5 42
PSKH
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Features
●
●
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 500 A
f =50 Hz, t
P
=200 µs
V
D
= 2/3 V
DRM
I
G
= 0.5 A
non repetitive, I
T
= 500 A
di
G
/dt = 0.5 A/µs
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
P
= 30 µs
t
P
= 500 µs
A/µs
V/µs
●
●
International standard package
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
Keyed gate/cathode twin pins
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Applications
W
W
W
V
°C
°C
°C
V~
V~
●
●
●
●
●
Motor control
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Contactless switches
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
3000
3600
Advantages
●
●
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
2.25-2.75/20-25 Nm/lb.in.
4.5-5.5/40-48 Nm/lb.in.
125
g
●
●
Space and weight savings
Simple mounting with two screws
Improved temperature and power
cycling capability
Reduced protection circuits
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Symbol
I
RRM
, I
DRM
V
T
, V
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
, I
F
= 300 A; T
VJ
= 25°C
For power-loss calculations only (T
VJ
= 125°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
V
D
= 2/3 V
DRM
Characteristic Values
10
1.25
0.88
1.15
2.5
2.6
150
200
0.2
10
300
200
2
150
550
235
0.155
0.0775
0.225
0.1125
12.7
9.6
50
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
mA
µs
Fig. 1 Gate trigger characteristics
µs
µC
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
T
VJ
= 25°C; t
P
= 30 µs; V
D
= 6 V
I
G
= 0.5 A; di
G
/dt = 0.5 A/µs
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
∞
T
VJ
= 25°C; V
D
= 1/2 V
DRM
I
G
= 0.5 A; di
G
/dt = 0.5 A/µs
T
VJ
= T
VJM
; I
T
= 300 A, t
P
= 200 ms; -di/dt = 10 A/µs typ.
V
R
= 100 V; dv/dt = 20 V/µs; V
D
= 2/3 V
DRM
T
VJ
= T
VJM
; I
T
, I
F
= 300 A, -di/dt = 50 A/µs
per
per
per
per
thyristor/diode; DC current
module
thyristor/diode; DC current
module
other values
see Fig. 8/9
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
PSKT Version 1
PSKH Version 1
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4
∫i
2
dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
3 x PSKT 162 or
3 x PSKH 162
POWERSEM GmbH, Walpersdorfer Str. 53
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Circuit
W3
3 x PSKT 162 or
3 x PSKH 162
Z
thJC
(t)
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
R
thJC
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJC
(K/W)
0.155
0.167
0.176
0.197
0.227
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.0072
0.0188
0.129
t
i
(s)
0.001
0.08
0.2
Z
thJK
(t)
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
R
thJK
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJK
(K/W)
0.225
0.237
0.246
0.267
0.297
Constants for Z
thJK
calculation:
i
1
2
3
4
R
thi
(K/W)
0.0072
0.0188
0.129
0.07
t
i
(s)
0.001
0.08
0.2
1.0
POWERSEM GmbH, Walpersdorfer Str. 53
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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