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BTA212B800F

Description
TRIAC, 800V V(DRM), 12A I(T)RMS
CategoryAnalog mixed-signal IC    Trigger device   
File Size47KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BTA212B800F Overview

TRIAC, 800V V(DRM), 12A I(T)RMS

BTA212B800F Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current25 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current30 mA
JESD-609 codee0
Maximum leakage current0.5 mA
Maximum on-state voltage1.6 V
Maximum operating temperature125 °C
Maximum rms on-state current12 A
Off-state repetitive peak voltage800 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeTRIAC
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
GENERAL DESCRIPTION
Passivated guaranteed commutation
triacs in a plastic envelope suitable for
surface mounting intended for use in
motor control circuits or with other highly
inductive loads. These devices balance
the requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
BTA212B series D, E and F
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BTA212B-
BTA212B-
BTA212B-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600D
600E
600F
600
12
95
MAX.
-
800E
800F
800
12
95
UNIT
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT404
PIN
1
2
3
mb
DESCRIPTION
main terminal 1
main terminal 2
gate
main terminal 2
PIN CONFIGURATION
mb
SYMBOL
T2
2
1
3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
mb
99 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
-600
600
1
12
MAX.
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
95
105
45
100
2
5
5
0.5
150
125
A
A
A
2
s
A/µs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
February 2000
1
Rev 1.000
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