EEWORLDEEWORLDEEWORLD

Part Number

Search

PSMG150-01

Description
Power MOSFET
File Size137KB,4 Pages
ManufacturerPowersem GmbH
Websitehttps://www.powersem.net/index.php
Download Datasheet Compare View All

PSMG150-01 Overview

Power MOSFET

ECO-PAC
TM
2
Power MOSFET
in ECO-PAC 2
Single MOSFET Die
PSMG 150/01*
X18
I K10/11 A1
L N 8/9
V
DSS
I
D25
R
DS(on)
t
rr
=
100 V
= 165 A
= 8 mΩ
< 250 ns
Preliminary Data Sheet
MOSFET
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
Symbol
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C (MOSFET chip capability)
External lead (current limit)
T
C
= 25°C
1)
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
T
J
150°C, R
G
= 2
T
C
= 25°C
Test Conditions
K13
K15
*NTC optional
Maximum Ratings
100
100
±20
±30
165
76
720
180
60
3
5
400
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 3000V electrical isolation
• Low drain to tab capacitance(< 25pF)
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
• UL certified, E 148688
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
100
2.0
4.0
±100
100
2
8
60
90
9400
3200
1660
50
90
140
65
400
65
220
0.30
0.2
V
V
nA
µA
mA
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
= ±20 V, V
DS
= 0
V
DS
= V
DSS
; T
J
= 25°C
V
GS
= 0 V; T
J
= 125°C
V
GS
= 10 V, I
D
= 90 A
1)
V
DS
= 10 V; I
D
= 90 A
2)
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 90 A
R
G
= 1
(External)
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 90 A
with heatsink compound (0.42 K/m.K; 50 µm)
Caution:
These Devices are sensitive
to electrostatic discharge. Users
should observe proper ESD handling
precautions.
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

PSMG150-01 Related Products

PSMG150-01 PSMG150/01
Description Power MOSFET Power MOSFET
I have a question about digital tubes....Please help me...
I took the board apart and tested it with a multimeter, and found out the pins of the digital tube. They are common anodes. However, when I wrote the program, the displayed words were not the same as ...
kadina2050 Embedded System
Are there any requirements for the external input of the PIC24 Timer 1 clock?
Does T1CK have to be a 32K crystal on the SOSCI pin? Is it okay to use the internal clock source as the main oscillator of the microcontroller? :):):) The purpose is to keep the timer running in sleep...
貌然神伤 Microchip MCU
Help ARM issues
Could you please tell me how to use ARM7 to implement protocol conversion?...
qiu_yinong ARM Technology
Who in the forum wants to study Stellaris?
Let's talk about what you think about Stellaris. What do you want to do? How do you plan to do it? Let's work together~~...
soso Microcontroller MCU
Ask the seniors for some confusion about DSP
I have only done some small projects with single-chip microcomputers before, and have never been exposed to DSP. I have some time during the holidays and want to learn it by myself. Except for the com...
晓寒 DSP and ARM Processors
msp430 generates a sinusoidal signal with a certain bandwidth
I want to use msp430 plus some peripheral circuits to design a sine signal that can generate about 1k to 100k, about 1V, but I don't know where to start. I hope you can give me some advice. I've just ...
nerolove Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 474  2076  1247  1811  551  10  42  26  37  12 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号