SPCO
C604
40mm / 4500 V THYRISTOR
Type C604 thyristor is suitable for phase control applications such as static VAR compensators and
synchronous motor drives.
The silicon junction is manufactured by the proven multi-diffusion process and is supplied in an
industry standard disc-type package, ready to mount to forced or naturally cooled heat dissipators
using commercially available mechanical clamping hardware.
PRINCIPAL RATINGS AND CHARACTERISTICS
Repetitive peak off-
state & reverse volts
Off-state & reverse
leakage current
Average on-state
current
Peak half-cycle
non-rep surge current
On-state voltage
V
DRM
V
RRM
I
DRM
I
RRM
I
T(AV)
I
TSM
V
TM
T
J
=0
to 125
o
C
T
J
=0
to 125
o
C
T
case
=
70
o
C
60 Hz
50 Hz
up to
4500
75
75
400
V
ON-STATE CHARACTERISTIC
On-state current , It (amperes)
5000
ma
A
Process Maximum
8 ms pulses
initial Tj = 125 C
1000
5500
5100
1.85
2.10
40
A
T
case
=125
o
C, 320A
500A
8ms pulse
Critical rate of rise
di/dt
T
J
=110
o
C
of on-state current
rep
60 Hz
V
d
=.67V
DRM
allowable snubber discharge
100
0
1
2
3
4
5
6
7
8
9
10
On-state Voltage , Vt (volts)
96b:
V
A/us
40
1000
A
V/us
Critical rate of rise
of off-state voltage
Recovery current
dv/dt
T
J
=125
o
C
V
DCRIT
=67%V
DRM
MECHANICAL OUTLINE
J
T
J
=125
o
C
2A/us
5A/us
minimum snap factor S = 0.3
I
RM
t
d
T
off
R
thJC
F
Vd=.5V
DRM
5A/us,-100V
20V/us to 2000V
A
85
__
Turn-on delay
C
L
5
400
us
us
Turn-off time
C
L
Thermal resistance
20° ±5°
.040
c/w
Externally applied
clamping force
Gate Drive:
3500 - 4200 lbs.
15.6 - 18.7 kN
A Ø
B Ø
40V / 10 ohm / 0.5us risetime
20us pulse duration
D
B Ø
AΦ = 2.30 in (58.0 mm)
Φ
BΦ=1.35 in (34.3 mm)
Φ
D=1.04 in (26.4 mm)
REPETITIVE PEAK REVERSE
AND OFF-STATE BLOCKING
VOLTAGE
T
J
= 0 to 125
o
C
MODEL
V
DRM
V
RRM
S
ILICON
P
OWER
CO
RPORATION
175 GREAT VALLEY PARKWAY, MALVERN , PA 19355
USA
96b:
C604DE
C604DD
C604DC
C604DB
(volts)
4500
4400
4300
4200
(volts)
4500
4400
4300
4200
5/21/96
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