Power Field-Effect Transistor, 32A I(D), 160V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Maker | TT Electronics plc |
| package instruction | FLANGE MOUNT, R-PUFM-D4 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Configuration | COMPLEX |
| Minimum drain-source breakdown voltage | 160 V |
| Maximum drain current (ID) | 32 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PUFM-D4 |
| Number of components | 4 |
| Number of terminals | 4 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | SOLDER LUG |
| Terminal location | UPPER |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |