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BUZ900X4S

Description
Power Field-Effect Transistor, 32A I(D), 160V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size63KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
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BUZ900X4S Overview

Power Field-Effect Transistor, 32A I(D), 160V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

BUZ900X4S Parametric

Parameter NameAttribute value
MakerTT Electronics plc
package instructionFLANGE MOUNT, R-PUFM-D4
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationCOMPLEX
Minimum drain-source breakdown voltage160 V
Maximum drain current (ID)32 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PUFM-D4
Number of components4
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

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