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BUZ901P

Description
8A, 200V, N-CHANNEL, Si, POWER, MOSFET, TO-247
CategoryDiscrete semiconductor    The transistor   
File Size38KB,4 Pages
ManufacturerSEMELAB
Download Datasheet Parametric Compare View All

BUZ901P Overview

8A, 200V, N-CHANNEL, Si, POWER, MOSFET, TO-247

BUZ901P Parametric

Parameter NameAttribute value
MakerSEMELAB
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)8 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
MAGNA
TEC
4.69
5.31
1.49
2.49
(0.185)
(0.209)
(0.059)
(0.098)
6.15
(0.242)
BSC
15.49 (0.610)
16.26 (0.640)
20.80 (0.819)
21.46 (0.845)
BUZ900P
BUZ901P
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
POWER MOSFETS FOR
AUDIO APPLICATIONS
3.55 (0.140)
3.81 (0.150)
4.50
(0.177)
M ax.
1
2
3
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
FEATURES
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P–CHANNEL ALSO AVAILABLE AS
BUZ905P & BUZ906P
0.40 (0.016)
0.79 (0.031)
19.81 (0.780)
20.32 (0.800)
1.01 (0.040)
1.40 (0.055)
2.21 (0.087)
2.59 (0.102)
5.25 (0.215)
BSC
TO–247
Pin 1 – Gate
Pin 2 – Source
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSX
Drain – Source Voltage
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θJC
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
BUZ900P
160V
±14V
8A
8A
125W
–55 to 150°C
150°C
1.0°C/W
BUZ901P
200V
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94

BUZ901P Related Products

BUZ901P BUZ900P
Description 8A, 200V, N-CHANNEL, Si, POWER, MOSFET, TO-247 8A, 160V, N-CHANNEL, Si, POWER, MOSFET, TO-247
Maker SEMELAB SEMELAB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 200 V 160 V
Maximum drain current (ID) 8 A 8 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-247 TO-247
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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