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BZD23-C82AMO

Description
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size114KB,5 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BZD23-C82AMO Overview

DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

BZD23-C82AMO Parametric

Parameter NameAttribute value
MakerNXP
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage87 V
Minimum breakdown voltage77 V
Breakdown voltage nominal value82 V
Shell connectionISOLATED
Maximum clamping voltage114 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Maximum dynamic impedance100 Ω
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak reverse power dissipation300 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation2.5 W
Certification statusNot Qualified
Nominal reference voltage82 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance5%
Working test current10 mA
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