INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU2525DX
DESCRIPTION
·High
Switching Speed
·High
Voltage
·Built-in
Ddamper Ddiode
APPLICATIONS
·Designed
for use in horizontal deflection circuits of
large screen color TV receivers
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current-Continuous
Base Current-peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1500
800
7.5
12
30
8
12
45
150
-55~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
2.8
UNIT
K/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CES
I
EBO
h
FE-1
h
FE-2
V
ECF
C
OB
PARAMETER
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
C-E Diode Forward Voltage
Output Capacitance
CONDITIONS
I
C
= 100mA; I
B
= 0, L= 25mH
I
E
= 600mA; I
C
= 0
I
C
= 8A; I
B
= 1.6A
B
BU2525DX
MIN
800
7.5
TYP.
MAX
UNIT
V
V
5.0
1.1
1.0
2.0
72
11
5
7
9.5
2.0
145
218
V
V
mA
mA
I
C
= 8A; I
B
= 1.6A
B
V
CE
= BV
CES;
V
BE
= 0
V
CE
= BV
CES;
V
BE
= 0;T
C
=125℃
V
EB
= 6V; I
C
= 0
I
C
= 1A; V
CE
= 5V
I
C
= 8A; V
CE
= 5V
I
F
= 8A
I
E
= 0 ; V
CB
= 10V;f
test
= 1MHz
V
pF
Switching times
Storage Time
I
C
= 8A , I
B(
end
)
= 1.1A; L
B
= 2.5μH
-V
BB
= 4V; (-dI
B
/dt= 1.6A/μs)
Fall Time
0.35
4.0
μs
μs
t
stg
t
f
isc Website：www.iscsemi.cn
Suggestions & Announcements
京公网安备 11010802033920号
EEWORLD
