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BT152B400RT/R

Description
Silicon Controlled Rectifier, 13000mA I(T), 400V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size260KB,5 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BT152B400RT/R Overview

Silicon Controlled Rectifier, 13000mA I(T), 400V V(DRM)

BT152B400RT/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Nominal circuit commutation break time70 µs
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current32 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current60 mA
Maximum leakage current1 mA
On-state non-repetitive peak current200 A
Maximum on-state voltage1.8 V
Maximum on-state current13000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage400 V
surface mountNO
Trigger device typeSCR

BT152B400RT/R Related Products

BT152B400RT/R BT152B600R
Description Silicon Controlled Rectifier, 13000mA I(T), 400V V(DRM) Silicon Controlled Rectifier, 13000mA I(T), 600V V(DRM)
Is it Rohs certified? conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown not_compliant
Nominal circuit commutation break time 70 µs 70 µs
Critical rise rate of minimum off-state voltage 200 V/us 200 V/us
Maximum DC gate trigger current 32 mA 32 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V
Maximum holding current 60 mA 60 mA
Maximum leakage current 1 mA 1 mA
On-state non-repetitive peak current 200 A 200 A
Maximum on-state voltage 1.8 V 1.8 V
Maximum on-state current 13000 A 13000 A
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Off-state repetitive peak voltage 400 V 600 V
surface mount NO NO
Trigger device type SCR SCR
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