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NX6504SI-A

Description
1550nm, LASER DIODE, CAN PACKAGE-4
CategoryLED optoelectronic/LED    photoelectric   
File Size95KB,11 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance  
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NX6504SI-A Overview

1550nm, LASER DIODE, CAN PACKAGE-4

NX6504SI-A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
package instructionCAN PACKAGE-4
Reach Compliance Codecompliant
ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE
JESD-609 codee6
Number of functions1
Optoelectronic device typesLASER DIODE
Nominal output power10 mW
peak wavelength1550 nm
shapeROUND
size1.6 mm
Terminal surfaceTin/Bismuth (Sn/Bi)
Maximum threshold current25 mA
DATA SHEET
LASER DIODE
NX6504 Series
1 550 nm FOR 156 Mb/s, 622 Mb/s
InGaAsP MQW-DFB LASER DIODE
DESCRIPTION
The NX6504 Series is a 1 550 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This
device is ideal for Synchronous Digital Hierarchy (SDH) system, STM-1,
STM-4, ITU-T recommendations.
NX6504S Series
FEATURES
• Optical output power
• Low threshold current
• High speed
• SMSR
• InGaAs monitor PIN-PD
• CAN package
• Based on Telcordia reliability
P
o
= 5.0 mW
l
th
= 12 mA
t
r
, t
f
= 0.5 ns MAX.
45 dB
• Wide operating temperature range T
C
=
−10
to +85°C
φ
5.6 mm
NX6504G Series
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PL10069EJ02V0DS (2nd edition)
Date Published November 2002 CP(K)
Printed in Japan
The mark
shows major revised points.
©
NEC Compound Semiconductor Devices 2002

NX6504SI-A Related Products

NX6504SI-A
Description 1550nm, LASER DIODE, CAN PACKAGE-4
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker Renesas Electronics Corporation
package instruction CAN PACKAGE-4
Reach Compliance Code compliant
Configuration SINGLE WITH BUILT-IN PHOTO DIODE
JESD-609 code e6
Number of functions 1
Optoelectronic device types LASER DIODE
Nominal output power 10 mW
peak wavelength 1550 nm
shape ROUND
size 1.6 mm
Terminal surface Tin/Bismuth (Sn/Bi)
Maximum threshold current 25 mA

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