DATA SHEET
LASER DIODE
NX6504 Series
1 550 nm FOR 156 Mb/s, 622 Mb/s
InGaAsP MQW-DFB LASER DIODE
DESCRIPTION
The NX6504 Series is a 1 550 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This
device is ideal for Synchronous Digital Hierarchy (SDH) system, STM-1, STM-
4, ITU-T recommendations.
NX6504S Series
FEATURES
• Optical output power
• Low threshold current
• High speed
• Side mode suppression ratio
• InGaAs monitor PIN-PD
• CAN package
• Based on Telcordia reliability
P
o
= 5.0 mW
l
th
= 12 mA
t
r
, t
f
= 0.5 ns MAX.
SMSR = 45 dB
• Wide operating temperature range T
C
=
−10
to +85°C
φ
5.6 mm
NX6504G Series
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PL10069EJ03V0DS (3rd edition)
Date Published January 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 2002, 2004
NX6504 Series
PACKAGE DIMENSIONS (UNIT: mm)
NX6504S Series
5.6
4.2±0.1
3.55±0.05
+0.00
–0.03
1.0±0.1
BOTTOM VIEW
1
0.3
+0.1
–0.0
110˚±2˚
2
3
4
0.3
+0.1
–0.0
0.25±0.03
(GLASS)
1.6±0.1
0.25
0.33
PIN CONNECTIONS
NX6504SH
1 (CASE)
LD
2
PD
3
4
PD
3
2
4
1.0 MIN.
*1
NX6504SK
1 (CASE)
LD
15.0±1.0 1.2±0.1 2.1±0.15
LD CHIP
1.27±0.05
REFERENCE
PLANE
4– 0.45
2.0
P.C.D
*1
n = 1.48 Bolosilicate Glass
NX6504G Series
5.6
+0.00
–0.03
4.3±0.1
3.75±0.05
BOTTOM VIEW
1.0±0.1
1
110˚±2˚
0.3
+0.1
–0.0
2
3
4
0.3
+0.1
–0.0
Focal Point
PIN CONNECTIONS
15.0±1.0 1.2±0.1 3.97±0.1
8.6±1.0
NX6504GH
1 (CASE)
LD
2
PD
3
4
2
NX6504GK
1 (CASE)
LD
4
PD
3
4– 0.45
2.0
P.C.D
2
Data Sheet PL10069EJ03V0DS
NX6504 Series
ORDERING INFORMATION
NX6504S Series
Part Number
NX6504SH
Package
4-pin CAN with flat glass cap
2
PD
3
Pin Connections
1
LD
4
NX6504SK
2
PD
1
LD
4
3
NX6504G Series
Part Number
NX6504GH
Package
4-pin CAN with aspherical lens cap
2
PD
3
Pin Connections
1
LD
4
NX6504GK
2
PD
1
LD
4
3
Data Sheet PL10069EJ03V0DS
3
NX6504 Series
ABSOLUTE MAXIMUM RATINGS
Parameter
Optical Output Power
Forward Current of LD
Reverse Voltage of LD
Forward Current of PD
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
Lead Soldering Temperature
Relative Humidity (noncondensing)
Symbol
P
o
I
F
V
R
I
F
V
R
T
C
T
stg
T
sld
RH
Ratings
10
150
2.0
10
20
−10
to +85
−40
to +85
350 (3 sec.)
85
Unit
mW
mA
V
mA
V
°C
°C
°C
%
ELECTRO-OPTICAL CHARACTERISTICS (T
C
= 25°C, unless otherwise specified)
Parameter
Operating Voltage
Threshold Current
Symbol
V
op
I
th
T
C
= 85°C
Threshold Output Power
Differential Efficiency
Temperature Dependence of
Differential Efficiency
Peak Emission Wavelength
λ
p
P
th
T
C
=
−10
to +85°C, I
F
= I
th
0.15
0.25
−1.5
Conditions
P
o
= 5.0 mW, T
C
=
−10
to +85°C
MIN.
TYP.
1.0
12
35
MAX.
1.5
25
50
200
Unit
V
mA
µ
W
W/A
dB
η
d
∆η
d
∆η
d
= 10 log
η
d
(@ 85°C)
η
d
(@ 25°C)
−3.0
P
o
= 5.0 mW, RMS (−20 dB)
T
C
=
−10
to +85°C
P
o
= 5.0 mW, T
C
=
−10
to +85°C
P
o
= 5.0 mW, FAHM
P
o
= 5.0 mW, FAHM
10-90%
90-10%
V
R
= 5 V, P
o
= 5.0 mW
V
R
= 5 V
V
R
= 5 V, T
C
=
−10
to +85°C
*2
1 530
1 570
nm
Side Mode Suppression Ratio
Vertical Beam Angle
Lateral Beam Angle
Rise Time
Fall Time
Monitor Current
Monitor Dark Current
*1
SMSR
30
45
30
25
0.05
0.2
40
35
0.5
0.5
1 000
10
500
6
20
1.0
dB
deg.
deg.
ns
ns
θ
⊥
θ
//
t
r
t
f
I
m
I
D
*1
*2
200
600
0.1
µ
A
nA
Monitor PD Terminal Capacitance
Tracking Error
*3
C
t
γ
V
R
= 5 V, f = 1 MHz
I
m
= const. (@ P
o
= 5.0 mW, T
C
= 25°C)
T
C
=
−10
to +85°C
−1.0
pF
dB
*1
Applicable to only NX6504S Series
*2
FAHM: Full Angle at Half Maximum
4
Data Sheet PL10069EJ03V0DS
京公网安备 11010802033920号
EEWORLD
