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NE68719-T1-A

Description
TRANSISTOR,BJT,NPN,3V V(BR)CEO,30MA I(C),SOT-23VAR
CategoryDiscrete semiconductor    The transistor   
File Size179KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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NE68719-T1-A Overview

TRANSISTOR,BJT,NPN,3V V(BR)CEO,30MA I(C),SOT-23VAR

NE68719-T1-A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.03 A
Minimum DC current gain (hFE)70
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.09 W
surface mountYES
Nominal transition frequency (fT)7000 MHz
NPN SILICON RF TRANSISTOR
NE68719
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR LOW-NOISE MICROWAVE AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
FEATURES
• Low noise
NF = 1.3 dB TYP. @ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
• 3-pin ultra super minimold package
ORDERING INFORMATION
Part Number
NE68719-A
NE68719-T1-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
5
3
2
30
90
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10213EJ01V0DS (1st edition)
(Previous No. P12110EJ2V0DS00)
Date Published January 2003 CP(K)
The mark
shows major revised points.
©
NEC Compound Semiconductor Devices 1994,

NE68719-T1-A Related Products

NE68719-T1-A NE68719-A
Description TRANSISTOR,BJT,NPN,3V V(BR)CEO,30MA I(C),SOT-23VAR TRANSISTOR,BJT,NPN,3V V(BR)CEO,30MA I(C),SOT-23VAR
Is it Rohs certified? conform to conform to
Maker Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.03 A 0.03 A
Minimum DC current gain (hFE) 70 70
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.09 W 0.09 W
surface mount YES YES
Nominal transition frequency (fT) 7000 MHz 7000 MHz
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