NPN SILICON RF TRANSISTOR
NE851M13 / 2SC5801
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
FEATURES
• Low phase distortion, low voltage operation
• Ideal for OSC applications
• 3-pin lead-less minimold package
ORDERING INFORMATION
Part Number
NE851M13-A
2SC5801-A
NE851M13-T3-A
2SC5801-T3-A
10 kpcs/reel
• Pin 2 (Base) face the perforation side of the tape
Quantity
50 pcs (Non reel)
Supplying Form
• 8 mm wide embossed taping
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
9.0
5.5
1.5
100
140
150
65
to +150
Unit
V
V
V
mA
mW
C
C
T
j
T
stg
Note
Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
Caution
:
Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10085EJ02V0DS (2nd edition)
Date Published March 2002 CP(K)
The mark
shows major revised points.
NE851M13 / 2SC5801
ELECTRICAL CHARACTERISTICS (T
A
= +25C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
f
T
f
T
½S
21e
½
½S
21e
½
NF
C
re
Note 2
2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 5 mA
–
–
100
–
–
120
600
600
145
nA
nA
–
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
3.0
5.0
3.0
4.5
–
–
4.5
6.5
4.0
5.5
1.9
0.6
–
–
–
–
2.5
0.8
GHz
GHz
dB
dB
dB
pF
Notes 1.
Pulse measurement: PW
350
s, Duty Cycle
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
E7
100 to 145
2
Data Sheet PU10085EJ02V0DS
NE851M13 / 2SC5801
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25C)
Data Sheet PU10085EJ02V0DS
3
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