P6SMB Series
Vishay Semiconductors
formerly General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
Cathode Band
DO-214AA
(SMB J-Bend)
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
ded ge*
ten an
Ex e R
ltag
Vo
0.083 MIN
(2.10 MIN)
0.050 MIN
(1.27 MIN)
V
(BR)
Unidirectional
6.8 to 540V
V
(BR)
Bidirectional
6.8 to 220V
Peak Pulse Power
600W
Mounting Pad Layout
0.106 MAX
(2.69 MAX)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
Dimensions in inches
and (millimeters)
0.008
(0.203)
Max.
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.220 REF
Mechanical Data
Case:
JEDEC DO-214AA (SMB) molded plastic over
passivated junction
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026. High temperature soldering guaranteed:
250°C/10 seconds at terminals.
Polarity:
For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation.
Standard Packaging:
12mm tape (EIA STD RS-481)
Weight:
0.003oz., 0.093g
Packaging Codes – Options (Antistatic):
51 – 2K per Bulk box, 20K/carton
52 – 750 per 7” plastic Reel (12mm tape), 15K/carton
5B – 3.2K per 13” plastic Reel (12mm tape), 32K/carton
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Low profile package with built-in strain relief for
surface mounted applications
• Glass passivated junction
• Low incremental surge resistance
• 600W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
• Excellent clamping capability
• Very fast response time
*
Voltages above 220V available Q3-2002
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. P6SMB10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak power dissipation with a 10/1000µs waveform
(1)(2)
(Fig. 1)
Peak pulse current with a 10/1000µs waveform
(1)
Power dissipation on infinite heatsink, T
A
= 50°C
Peak forward surge current 8.3ms single half sine-wave
uni-directional only
(2)
Operating junction and storage temperature range
Thermal resistance junction to ambient air
(3)
Thermal resistance junction to leads
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
T
J
, T
STG
R
θJA
R
θJL
T
J
, T
STG
Value
Minimum 600
See Next Table
5.0
100
–65 to +150
100
20
–65 to +150
Unit
W
A
W
A
°C
°C/W
°C/W
°C
Notes:
(1) Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2.
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Document Number 88370
18-Jul-02
www.vishay.com
1
P6SMB Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
General
Semiconductor
Part Number
P6SMB6.8A
P6SMB7.5A
P6SMB8.2A
P6SMB9.1A
P6SMB10A
P6SMB11A
P6SMB12A
P6SMB13A
P6SMB15A
P6SMB16A
P6SMB18A
P6SMB20A
P6SMB22A
P6SMB24A
P6SMB27A
P6SMB30A
P6SMB33A
P6SMB36A
P6SMB39A
P6SMB43A
P6SMB47A
P6SMB51A
P6SMB56A
P6SMB62A
P6SMB68A
P6SMB75A
P6SMB82A
P6SMB91A
P6SMB100A
P6SMB110A
P6SMB120A
P6SMB130A
P6SMB150A
P6SMB160A
P6SMB170A
P6SMB180A
P6SMB200A
P6SMB220A
P6SMB250A
P6SMB300A
P6SMB350A
P6SMB400A
P6SMB440A
P6SMB480A
P6SMB510A
P6SMB540A
Notes:
(1)
(2)
(3)
(4)
F
= 3.5V at I
F
= 50A (uni-directional only)
Device Marking
Code
UNI
6V8A
7V5A
8V2A
9V1A
10A
11A
12A
13A
15A
16A
18A
20A
22A
24A
27A
30A
33A
36A
39A
43A
47A
51A
56A
62A
68A
75A
82A
91A
100A
110A
120A
130A
150A
160A
170A
180A
200A
220A
250A
300A
350A
400A
440A
480A
510A
540A
BI
6V8C
7V5C
8V2C
9V1C
10C
11C
12C
13C
15C
16C
18C
20C
22C
24C
27C
30C
33C
36C
39C
43C
47C
51C
56C
62C
68C
75C
82C
91C
100C
110C
120C
130C
150C
160C
170C
180C
200C
220C
—
—
—
—
—
—
—
—
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
6.45
7.13
7.79
8.65
9.50
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
105
114
124
143
152
162
171
190
209
237
285
333
380
418
456
485
513
Max
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
231
263
315
368
420
462
504
535
567
Test
Current
I
T
(mA)
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.80
6.40
7.02
7.78
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
64.1
70.1
77.8
85.5
94.0
102
111
128
136
145
154
171
185
214
256
300
342
376
408
434
459
Maximum
Reverse
Leakage
at V
WM
I
D
(3)
(µA)
1000
500
200
50
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum Maximum Maximum
Peak Pulse Clamping
Temp.
Current
Voltage at Coefficient
I
PPM
(2)
I
PPM
of V
(BR)
(A)
V
C
(V)
(%/°C)
57.1
53.1
49.6
44.8
41.4
38.5
35.9
33.0
28.3
26.7
23.8
21.7
19.6
18.1
16.0
14.5
13.1
12.0
11.1
10.1
9.3
8.6
7.8
7.1
6.5
5.8
5.3
4.8
4.4
3.9
3.6
3.4
2.9
2.7
2.6
2.4
2.2
1.8
1.74
1.45
1.24
1.10
1.00
0.91
0.86
0.81
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103
113
125
137
152
165
179
207
219
234
246
274
328
344
414
482
548
602
658
698
740
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Pulse test: t
p
≤
50ms
Surge current waveform per Fig. 3 and derate per Fig. 2
For bidirectional types with V
WM
of 10 volts and less, the I
D
limit is doubled
All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88370
18-Jul-02
P6SMB Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
100
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
Fig. 2 – Pulse Derating Curve
P
PPM
— Peak Pulse Power (kW)
75
10
50
1
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
25
0
0
25
50
75
100
125
150
175
200
t
d
— Pulse Width (sec.)
T
A
— Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
6,000
Fig. 4 – Typical Junction Capacitance
C
J
— Junction Capacitance (pF)
Measured at
Zero Bias
I
PPM
— Peak Pulse Current, % I
RSM
tr = 10µsec.
Peak Value
I
PPM
100
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
1,000
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
100
V
R
, Measured at
Stand-Off
Voltage, V
WM
Uni-Directional
Bi-Directional
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
100
200
td
0
0
1.0
2.0
3.0
4.0
10
1
10
t — Time (ms)
V
WM
— Reverse Stand-Off Voltage (V)
Fig. 5 – Typical Transient Thermal
Impedance
I
FSM
— Peak Forward Surge Current (A)
100
200
Fig. 6 – Maximum Non-Repetitive Peak
Forward Surge Current
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
100
Transient Thermal Impedance (°C/W)
10
1.0
0.1
0.001
10
0.01
0.1
1
10
100
1000
1
10
100
t
p
— Pulse Duration (sec)
Document Number 88370
18-Jul-02
Number of Cycles at 60H
Z
www.vishay.com
3
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