CAT93C76JE-1.8TE13REVA datasheet, PDF

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CAT93C76JE-1.8TE13REVA: Description512X16 MICROWIRE BUS SERIAL EEPROM, PDSO8, SOIC-8; Categorystorage storage; File Size151KB，12 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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CAT93C76JE-1.8TE13REVA Overview

512X16 MICROWIRE BUS SERIAL EEPROM, PDSO8, SOIC-8

CAT93C76JE-1.8TE13REVA Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	SOIC
package instruction	SOP,
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Spare memory width	8
Maximum clock frequency (fCLK)	1 MHz
JESD-30 code	R-PDSO-G8
JESD-609 code	e0
length	4.9 mm
memory density	8192 bit
Memory IC Type	EEPROM
memory width	16
Number of functions	1
Number of terminals	8
word count	512 words
character code	512
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
organize	512X16
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	240
Certification status	Not Qualified
Maximum seat height	1.75 mm
Serial bus type	MICROWIRE
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	1.8 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	3.9 mm

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CAT93C76

8-Kb Microwire Serial

EEPROM

Description

The CAT93C76 is an 8−Kb Serial EEPROM memory device which

is configured as either registers of 16 bits (ORG pin at V

or Not

Connected) or 8 bits (ORG pin at GND). Each register can be written

(or read) serially by using the DI (or DO) pin. The CAT93C76 is

manufactured using ON Semiconductor’s advanced CMOS EEPROM

floating gate technology. The device is designed to endure 1,000,000

program/erase cycles and has a data retention of 100 years. The device

is available in 8−pin PDIP, SOIC, TSSOP and 8−pad TDFN packages.

Features

http://onsemi.com

SOIC−8

V SUFFIX

CASE 751BD

TDFN−8

ZD4 SUFFIX

CASE 511AL

•

High Speed Operation: 3 MHz @ V

≥

2.5 V

Low Power CMOS Technology

1.8 to 5.5 Volt Operation

Selectable x8 or x16 Memory Organization

Self−timed Write Cycle with Auto−clear

Software Write Protection

Power−up Inadvertant Write Protection

1,000,000 Program/Erase Cycles

100 Year Data Retention

Industrial and Extended Temperature Ranges

Sequential Read

“Green” Package Option Available

This Device is Pb−Free, Halogen Free/BFR Free and RoHS

Compliant

ORG

GND

PDIP−8

L SUFFIX

CASE 646AA

TSSOP−8

Y SUFFIX

CASE 948AL

PIN CONFIGURATION

ORG

GND

PDIP (L), SOIC (V),

TSSOP (Y), TDFN (ZD4)

PIN FUNCTION

Pin Name

GND

ORG

Function

Chip Select

Serial Clock Input

Serial Data Input

Serial Data Output

Power Supply

Ground

Memory Organization

No Connection

Figure 1. Functional Symbol

NOTE: When the ORG pin is connected to V

, the x16 organization is selected.

When it is connected to ground, the x8 organization is selected. If the ORG pin

is left unconnected, then an internal pull−up device will select the x16 organization.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 12 of this data sheet.

Semiconductor Components Industries, LLC, 2009

August, 2009

−

Rev. 3

Publication Order Number:

CAT93C76/D

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