Infrared Emitting Diodes(GaAs)
KODENSHI
EL6F11
DIMENSIONS
The EL6F11 is a high-power GaAs IRED mounted in
a clear epoxy package. This IRED is both compact and
easy to mount.
(Unit : mm)
FEATURES
•Plastic mold package with a large caliber lens
•High output power
APPLICATIONS
•Optical switches
MAXIMUM RATINGS
Item
Reverse voltage
Forward current
Power dissipation
Pulse forward current
*1
Operating temp.
Storage temp.
Soldering temp.
*2
(Ta=25℃)
Symbol
V
R
I
F
P
D
I
FP
Topr.
Tstg.
Tsol.
Rating
4
50
80
1
－25½＋85
－40½＋85
260
Unit
V
mA
mW
A
℃
℃
℃
*1. pulse width ：tw ≦100 μ
sec.period ：T=10msec.
*2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage
Reverse current
Peak emission wavelength
Spectral bandwidth
Radiant intensity
*3
Half angle
*3. Measured by tester of KODENSHI CORP.
(Ta=25℃)
Symbol
V
I
R
λp
Δλ
P
O
Δθ
F
Conditions
I
F
=50mA
V
R
=4V
I
F
=20mA
I
F
=20mA
I
F
=50mA
I
F
=20mA
Min.
Typ.
1.3
940
50
6.0
±25
Max.
1.65
10
Unit.
V
μ
A
nm
nm
V
deg.
2.5
- 1-
Infrared Emitting Diodes(GaAs)
EL6F11
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
- 2-
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