ECO-PAC
TM
2
IGBT Module
Short Circuit SOA Capability
Square RBSOA
Preliminary Data Sheet
PSIG 50/06
PSI 50/06*
PSIS 50/06*
PSSI 50/06*
I
C25
= 42.5 A
V
CES
= 600 V
V
CE(sat)typ.
= 2.4 V
LN 9 S18
A1
JK 10
PSIG
OP 9
L 9
PSI
PSIG 50/06
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
PSI 50/06*
PSSI 50/06*
PSIS 50/06*
*NTC optional
E 2
G H 10
K 10
NTC
X 16
VX 18
X 15
X 13
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
600
± 20
V
V
A
A
A
X 15
IK 10
NTC
X 16
L 9
F 1
AC 1
R S 18
PSSI
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 33
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 33
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
42.5
29
60
V
CES
10
130
AC 1
PSIS
µs
W
L 9
T 16
X 15
NTC
R S 18
IK 1 0
X 16
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.4
2.9
4.5
2.9
6.5
0.6
1.7
100
50
50
270
40
1.4
1.0
16
1.92
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
0.96 K/W
K/W
Features
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.7 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Package with DCB ceramic base plate
Isolation voltage 3000 V∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
V
CE
= 0 V; V
GE
= ± 20 V
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 30 A
V
GE
= 15/0 V; R
G
= 33
Ω
Applications
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
Leads with expansion bend for
stress relief
Caution:
These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 50/06
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 30 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 15 A; di
F
/dt = 400 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Package style and outline
Maximum Ratings
30
19
A
A
Dimensions in mm (1mm = 0.0394“)
PSIG
Characteristic Values
min.
typ. max.
2.57
1.8
7
50
4.6
2.84
V
V
A
ns
2.3 K/W
K/W
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Characteristic Values
min. typ. max.
4.75
5.0
3375
5.25 kΩ
K
PSI
Conditions
Maximum Ratings
-40...+150
-40...+150
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M4)
Max. allowable acceleration
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
3000
1.5 - 2.0
14 - 18
50
°
C
°
C
V~
Nm
lb.in.
m/s
2
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
Characteristic Values
min. typ. max.
11.2
11.2
24
mm
mm
g
PSIS
PSSI
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 50/06
90
A
75
I
C
90
A
75
V
GE
= 17V
15V
13V
I
C
60
T
J
= 25°C
11V
60
45
30
15
0
0
V
GE
= 17 V
15 V
13 V
11V
45
30
T
J
= 125°C
9V
25T60
9V
15
0
25T60
1
2
3
4
V
CE
5
V
6
0
1
2
3
4
V
CE
5
V
6
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
90
A
75
I
C
V
CE
= 20V
90
A
75
I
F
60
45
T
J
= 125°C
T
J
= 25°C
60
45
30
T
J
= 125°C
T
J
= 25°C
30
15
25T60
15
0
4
6
8
10
12
V
GE
0
25T60
14
V
16
0,0
0,5
1,0
V
F
1,5
V
2,0
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
50
40
A
I
RM
20
V
150
120
ns
90
T
J
= 125°C
V
R
= 300 V
I
F
= 30 A
I
RM
15
V
GE
t
rr
t
rr
30
10
V
CE
= 300 V
I
C
= 30 A
20
10
25T60
60
30
MUBW3006A7
5
0
0
40
80
120
Q
G
nC
0
0
200
400
600
-di/dt
0
160
800
A/µs
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 50/06
8
V
CE
= 300V
mJ
V
GE
= ±15V
80
t
r
t
d(on)
E
on
ns
60
t
40
2,0
mJ
E
off
1,5
V
CE
= 300V
V
GE
= ±15V
R
G
= 33Ω
T
VJ
= 125°C
E
off
400
ns
300
t
E
on
6
R
G
= 33Ω
T
VJ
= 125°C
t
d(off)
200
4
1,0
2
20
0,5
t
f
100
0
0
20
40
I
C
25T60
0
0,0
0
20
40
I
C
25T60
0
60
A
60 A
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
2,0
V
CE
= 300 V
mJ
V = ±15 V
GE
I
C
= 30 A
1,5
T
VJ
= 125°C
E
on
V
CE
= 300V
mJ
V
GE
= ±15V
I
= 30A
3
C
T
VJ
= 125°C
4
t
d(on)
80
ns
400
t
d(off)
ns
300
E
off
t
t
r
E
on
60
t
E
off
2
1,0
40
200
1
0,5
t
f
100
0
0
10
20
30
40
50
R
G
25T60
20
0,0
0
10
20
30
40
50
R
G
25T60
0
60
70
Ω
80
60
70
Ω
80
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
10
K/W
Z
thJC
1
IGBT
diode
80
A
I
CM
60
0,1
40
0,01
20
R
G
= 33
Ω
T
VJ
= 125°C
0,001
25T60
single pulse
0
0
100
200
300
400
500
600
V
CE
700
V
0,0001
0,00001 0,0001 0,001
VDI...50-06P1
0,01
0,1
t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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