ECO-PAC 2
IGBT Module
Preliminary Data Sheet
TM
PSIG 75/06
PSI 75/06*
PSIS 75/06*
PSSI 75/06*
AC 1
L9
T16
X15
NTC
X16
IK 10
I
C25
= 69 A
V
CES
= 600 V
V
CE(sat)typ.
= 2.3 V
X15
NTC
X16
L9
F1
AC 1
IK 10
OP 9
L9
E2
K10
X16
X13
GH 10
NTC
X15
VX 18
PSI 75/06*
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
Conditions
T
VJ
= 25°C to 150°C
PSIS 75/06*
PSSI 75/06*
LMN S
Maximum Ratings
600
± 20
69
48
100
V
CES
10
208
V
V
A
A
A
µs
A IJK
PSIG 75/06*
V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
*NTC optional
Features
W
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.3
2.8
4.5
2.8
6.5
0.8
4.4
100
50
55
300
30
1.8
1.4
2.8
1.2
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
0.6 K/W
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 75 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
Package with DCB ceramic
base plate
Isolation voltage 3000 V
∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
Applications
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
V
CE
= 0 V; V
GE
= ± 20 V
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 40 A
V
GE
= 15/0 V; R
G
= 22
Ω
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and
power cycling capability
High power density
Small and light weight
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
Caution:
These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 75/06
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 40 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 30 A; di
F
/dt = 500 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Maximum Ratings
56
35
A
A
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSI
Characteristic Values
min.
typ. max.
2.32
1.58
15
70
2.6
2.59
V
V
A
ns
1.3 K/W
K/W
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Characteristic Values
min. typ.
max.
4.75
5.0
3375
5.25 kΩ
K
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M4)
Max. allowable acceleration
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
Conditions
Maximum Ratings
-40...+150
-40...+150
3000
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s
2
PSSI
Characteristic Values
min. typ. max.
11.2
11.2
24
mm
mm
g
PSIG
PSIS
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 75/06
150
A
120
V
GE
= 17 V
15 V
13 V
150
A
120
90
11V
V
GE
= 17 V
15 V
13 V
I
C
I
C
90
60
30
0
11V
T
VJ
= 125°C
60
T
VJ
= 25°C
9V
30
0
9V
42T60
42T60
0
1
2
3
4
V
CE
5
V
6
0
1
2
3
4
V
CE
5
V
6
Fig. 1 Typ. output characteristics
150
A
120
I
C
V
CE
= 20 V
Fig. 2 Typ. output characteristics
90
A
75
I
F
60
45
90
60
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
30
15
42T60
30
0
0
42T60
4
6
8
10
12
V
GE
14
V
16
0,0
0,5
1,0
V
F
1,5
V
2,0
Fig. 3 Typ. transfer characteristics
50
40
A
V
CE
= 300 V
I
C
= 50 A
Fig. 4 Typ. forward characteristics of
free wheeling diode
150
120
ns
90
T
VJ
= 125°C
V
R
= 300 V
I
F
= 30 A
I
RM
20
V
15
V
GE
I
RM
t
rr
t
rr
30
20
10
60
30
42T60
5
10
42T60
0
0
0
40
80
120
Q
G
nC
160
0
200
400
600
-di/dt
800
A/µs
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 75/06
10,0
mJ
E
on
t
d(on)
100
ns
75
t
E
off
4
mJ
E
off
400
ns
300
t
7,5
t
r
V
CE
= 300 V
V
GE
= ±15 V
3
5,0
50
2
t
d(off)
V
CE
= 300 V
V
GE
= ±15 V
R
G
= 22
Ω
T
VJ
= 125°C
200
2,5
E
on
R
G
= 22
Ω
T
VJ
= 125°C
42T60
25
1
100
t
f
0,0
0
40
80
I
C
A
120
0
0
42T60
0
40
80
I
C
A
0
120
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
3
mJ
600
ns
4
mJ
E
on
t
d(on)
E
on
t
r
80
ns
60
t
E
off
3
V
CE
= 300 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
42T60
2
V
CE
= 300 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
E
off
t
d(off)
400
t
2
40
1
200
1
0
10
20
30
40
R
G
50
Ω
60
20
0
t
f
42T60
0
10
20
30
40
R
G
50
Ω
60
0
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
10
K/W
Z
thJC
1
diode
IGBT
120
A
I
CM
90
R
G
= 22
Ω
T
VJ
= 125°C
0,1
0,01
60
30
0,001
42T60
single pulse
0
0
100
200
300
400
500
600
V
CE
700
V
0,0001
0,00001 0,0001 0,001
VID...75-06P1
0,01
0,1
t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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