ECO-PAC 2
IGBT Module
Preliminary Data Sheet
TM
PSIG 75/12
PSI 75/12*
PSIS 75/12*
PSSI 75/12*
AC 1
L9
T16
X15
NTC
X16
IK 10
I
C25
= 92 A
V
CES
= 1200 V
V
CE(sat)typ.
= 2.7 V
X15
NTC
X16
L9
F1
AC 1
IK 10
OP 9
L9
E2
K10
X16
X13
GH 10
NTC
X15
VX 18
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
PSI 75/12*
Conditions
T
VJ
= 25°C to 150°C
PSIS 75/12*
Maximum Ratings
1200
± 20
V
V
A
A
A
µs
W
PSSI 75/12*
LMN S
A IJK
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
92
62
100
V
CES
10
379
PSIG 75/12
*NTC optional
Features
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.7
3.0
4.5
3.2
6.5
V
V
V
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 75 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 2 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
Package with DCB ceramic
base plate
Isolation voltage 3000 V
∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
3.7 mA
12.5 mA
200
100
70
500
70
9.1
6.7
3.3
0.66
nA
ns
ns
ns
ns
mJ
mJ
nF
0.33 K/W
K/W
V
CE
= 0 V; V
GE
= ± 20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 60 A
V
GE
= 15/0 V; R
G
= 22
Ω
Applications
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and
power cycling capability
High power density
Small and light weight
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
Caution:
These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 75/12
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 60 A;
T
VJ
= 25°C
T
VJ
= 125°C
Maximum Ratings
103
65
A
A
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSI
Characteristic Values
min.
typ. max.
2.28
1.67
41
200
1.32
2.6
V
V
A
ns
0.66 K/W
K/W
I
F
= 60 A; di
F
/dt = 500 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Characteristic Values
min. typ. max.
4.75
5.0
3375
5.25 kΩ
K
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M4)
Max. allowable acceleration
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
Conditions
Maximum Ratings
-40...+150
-40...+150
3000
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s
2
PSSI
Characteristic Values
min. typ. max.
11.2
11.2
24
mm
mm
g
PSIG
PSIS
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 75/12
120
A
T
J
= 25°C
V
GE
=17 V
15 V
13 V
11 V
100
I
C
120
A
T
J
= 125°C
100
I
C
80
60
40
V
GE
=17 V
15 V
13 V
11 V
80
60
40
9V
9V
20
0
0,0
81T120
20
0
81T120
0,5
1,0
1,5
2,0
2,5
V
CE
3,0
V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
V
CE
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
120
A
V
CE
= 20 V
T
J
= 25°C
180
T
J
= 125°C
100
I
C
A
150
I
F
120
90
60
30
81T120
T
J
= 25°C
80
60
40
20
0
0
DWLP55-12
5
6
7
8
9
10
V
GE
11
V
0,5
1,0
1,5
2,0
2,5
V
F
3,0
V
3,5
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
120
A
20
V
300
ns
t
rr
V
GE
15
I
RM
V
CE
= 600 V
I
C
= 50 A
80
200
t
rr
10
40
5
I
RM
T
J
= 125°C
V
R
= 600 V
I
F
= 50 A
100
0
81T120
0
50
100
150
200
Q
G
250
nC
0
81T120
0
200
400
600
A/µs
800
-di/dt
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 75/12
24
mJ
E
on
120
ns
t
d(on)
90
t
E
off
12
mJ
10
8
6
4
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 22
Ω
T
J
= 125°C
600
E
off
ns
500
t
d(off)
400 t
300
200
t
f
81T120
18
12
t
r
60
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 22
Ω
T
J
= 125°C
81T120
6
E
on
30
2
0
100
0
0
0
20
40
60
I
C
80
100
A
0
0
20
40
60
80
I
C
100 A
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
10
mJ
t
E
off
ns
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
J
= 125°C
20
mJ
E
on
15
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
J
= 125°C
240
t
d(on)
E
on
t
d(off)
E
off
1500
ns
1200
t
900
600
300
180
8
6
10
t
r
120
4
60
5
2
0
81T120
0
81T120
0 10 20 30 40 50 60 70 80 90 100
Ω
R
G
0
t
f
0 10 20 30 40 50 60 70 80 90 100
Ω
R
G
0
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor
times
versus gate resistor
1
K/W
0,1
Z
thJC
120
A
100
I
CM
80
60
40
20
0
81T120
R
G
= 22
Ω
T
J
= 125°C
V
CEK
< V
CES
0,01
0,001
0,0001
diode
IGBT
single pulse
VID...75-12P1
0
200
400
600
800 1000 1200
V
V
CE
0,00001
0,00001 0,0001
0,001
0,01
t
0,1
s
1
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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