ECO-PAC
TM
2
IGBT Module
Short Circuit SOA Capability
Square RBSOA
Preliminary Data Sheet
PSIG 25/12
PSI 25/12*
PSIS 25/12*
PSSI 25/12*
I
C25
= 30 A
V
CES
= 1200 V
V
CE(sat)typ.
= 2.6 V
LN 9 S18
A1
JK 10
PSIG
P 9
L 9
PSI
X 13
NTC
PSIG 25/12
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
PSI 25/12*
PSSI 25/12*
PSIS 25/12*
*NTC optional
E 2
G 10
K 10
X 16
X 15
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
± 20
V
V
A
A
A
µs
L 9
X 18
X 15
IK 10
N TC
X 16
L 9
F 1
AC 1
AC 1
PSSI
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 82
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 82
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
30
21
35
V
CES
10
130
R S 18
PSIS
W
T 16
X 15
RS 18
IK 10
X 16
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
N TC
min.
typ. max.
2.6
2.9
3.3
6.5
0.9
3.7
100
100
75
500
70
2.7
2.1
1
Features
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 25 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.6 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
4.5
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Package with DCB ceramic base plate
Isolation voltage 3000 V∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
V
CE
= 0 V; V
GE
= ± 20 V
Applications
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 17.5 A
V
GE
= 15/0 V; R
G
= 82
Ω
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
Leads with expansion bend for
stress relief
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
1.92
0.96 K/W
K/W
Caution:
These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 25/12
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
26
17
A
A
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSIG
Conditions
I
F
= 17.5 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 15 A; di
F
/dt = 400 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Characteristic Values
min. typ. max.
2.48
1.84
16
130
4.6
2.79
V
V
A
ns
2.3 K/W
K/W
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Characteristic Values
min. typ.
4.75
5.0
3375
max.
5.25 kΩ
K
PSI
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
PSIS
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M4)
Max. allowable acceleration
Conditions
Maximum Ratings
-40...+150
-40...+150
3000
1.5 - 2.0
14 - 18
50
°
C
°
C
V~
Nm
lb.in.
m/s
2
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
Characteristic Values
min. typ.
11.2
11.2
24
max.
mm
mm
g
PSSI
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 25/12
50
A
40
V
GE
= 17V
15V
13V
50
A
40
30
11V
V
GE
= 17V
15V
13V
I
C
T
VJ
= 25°C
11V
I
C
T
VJ
= 125°C
30
20
10
0
0
1
2
3
4
V
CE
20
10
0
9V
9V
25T120
25T120
5
6
V
7
0
1
2
3
4
5
V
CE
6
V
7
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
50
A
40
I
C
V
CE
= 20V
50
40
A
30
T
VJ
= 125°C
T
VJ
= 25°C
I
F
30
20
T
VJ
= 125°C
T
VJ
= 25°C
20
10
25T120
10
0
4
6
8
10
12
V
GE
0
25T120
14
V
16
0
1
2
V
F
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
20
V
50
t
rr
200
160
ns
120
T
VJ
= 125°C
V
R
= 600V
I
F
= 15A
15
V
GE
V
CE
= 600V
I
C
= 15A
40
A
I
RM
t
rr
30
20
10
80
40
5
10
I
RM
25T120
0
0
20
40
60
Q
G
0
0
200
400
600
-di/dt
25T120
0
80
nC
100
800
A/µs
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 25/12
6
mJ
E
on
120
ns
t
d(on)
80
V
CE
= 600V
V
GE
= ±15V
R
G
= 82Ω
T
VJ
= 125°C
6
mJ
t
E
off
600
ns
400 t
E
off
t
d(off)
V
CE
= 600V
V
GE
= ±15V
R
G
= 82Ω
T
VJ
= 125°C
4
4
t
r
2
E
on
40
2
200
t
f
0
0
10
20
I
C
25T120
0
0
0
10
20
I
C
25T120
0
30
A
30 A
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
2,0
mJ
E
off
t
d(off)
800
ns
600
t
3
mJ
E
on
E
on
t
d(on)
t
r
150
ns
100
t
E
off
1,5
V
CE
= 600V
V
GE
= ±15V
I
C
= 15A
T
VJ
= 125°C
2
1
V
CE
= 600V
V
GE
= ±15V
50
I
C
= 15A
T
VJ
= 125°C
25T120
1,0
400
0,5
200
t
f
0
0
20
40
60
80
100
R
G
0
0,0
0
20
40
60
80
100
R
G
25T120
0
120
Ω
140
120
Ω
140
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
10
K/W
Z
thJC
1
IGBT
diode
40
A
I
CM
30
0,1
20
0,01
10
R
G
= 82
Ω
T
VJ
= 125°C
0,001
25T120
single pulse
0
0
200
400
600
V
CE
800 1000 1200 1400
V
0,0001
0,00001 0,0001 0,001
VDI...25-12P1
0,01
0,1
t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance RBSOA
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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