ECO-PAC
TM
2
IGBT Module
Short Circuit SOA Capability
Square RBSOA
Preliminary Data Sheet
PSIG 50/12
PSI 50/12*
PSIS 50/12*
PSSI 50/12*
I
C25
= 49 A
V
CES
= 1200 V
V
CE(sat)typ.
= 3.1 V
LN 9 S18
A1
JK 10
PSIG
OP 9
L 9
PSI
PSIG 50/12
PSI 50/12*
PSSI 50/12*
PSIS 50/12*
*NTC optional
E 2
G H 10
K 10
NTC
X 16
VX 18
X 15
X 13
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 47
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 47
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
± 20
49
33
50
V
CES
10
208
µs
W
V
V
A
A
A
X 15
NTC
X 16
L9
F1
IK 10
PSSI
RS 18
AC 1
AC 1
L9
T 16
X 15
NTC
IK 10
X 16
RS 18
PSIS
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
3.1
3.5
4.5
3.7
6.5
1.1
4.2
180
100
70
500
70
4.6
3.4
1.65
1.2
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
0.6 K/W
K/W
Features
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Package with DCB ceramic base plate
Isolation voltage 3000 V∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
V
CE
= 0 V; V
GE
= ± 20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 30 A
V
GE
= 15/0 V; R
G
= 47
Ω
Applications
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
Leads with expansion bend for
stress relief
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
Caution:
These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 50/12
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 30 A;
T
VJ
= 25°C
T
VJ
= 125°C
Maximum Ratings
49
31
A
A
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSIG
Characteristic Values
min.
typ. max.
2.4
1.77
27
150
2.6
2.7
V
V
A
ns
1.3 K/W
K/W
I
F
= 30 A; di
F
/dt = 500 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Characteristic Values
min. typ. max.
4.75
5.0
3375
5.25 kΩ
K
PSI
Conditions
Maximum Ratings
-40...+150
-40...+150
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M4)
Max. allowable acceleration
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
3000
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s
2
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
Characteristic Values
min. typ. max.
11.2
11.2
24
mm
mm
g
PSIS
PSSI
©
2002 POWERSEM reserves the right to change limits, test conditions and
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
dimensions
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 50/12
80
A
I
C
V
GE
= 17 V
15 V
13 V
11V
80
A
I
C
60
V
GE
= 17V
15V
13V
11V
60
40
T
VJ
= 25°C
40
20
9V
20
9V
T
VJ
= 125°C
42T120
0
0
1
2
3
4
V
CE
42T120
0
5
6
V
7
0
1
2
3
4
5
V
CE
6
V
7
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
80
A
I
C
50
40
A
30
60
V
CE
= 20V
I
F
40
20
T
VJ
= 125°C
T
VJ
= 25°C
20
T
VJ
= 125°C
T
VJ
= 25°C
42T120
10
0
42T120
0
4
6
8
10
12
V
GE
14
V
16
0
1
2
V
F
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
50
t
rr
20
V
200
160
ns
120
T
VJ
= 125°C
V
R
= 600 V
I
F
= 15 A
15
V
GE
A
40
I
RM
t
rr
30
10
V
CE
= 600V
I
C
= 25A
20
10
I
RM
42T120
80
40
5
0
0
40
80
120
Q
G
nC
0
0
200
400
600
-di/dt
A/µs
800
42T120
0
160
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 50/12
15
mJ
E
on
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 47
Ω
T
VJ
= 125°C
150
ns
100 t
E
off
12
mJ
t
d(off)
E
off
600
ns
400 t
10
8
V
CE
= 600V
V
GE
= ±15V
R
G
= 47Ω
T
VJ
= 125°C
t
d(on)
t
r
5
50
4
200
E
on
0
0
20
40
I
C
A
42T120
t
f
0
0
0
20
40
I
C
A
42T120
60
0
60
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
8
mJ
t
E
off
t
d(off)
800
ns
E
off
600
t
4
mJ
E
on
t
d(on)
160
ns
120
t
r
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 25 A
T
VJ
= 125°C
42T120
3
E
on
6
2
80
4
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 25 A
T
VJ
= 125°C
400
1
40
2
200
t
f
0
0
20
40
60
R
G
0
0
0
20
40
60
R
G
42T120
0
80
Ω
100
80
Ω
100
Fig.
9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
10
K/W
diode
60
A
I
CM
40
R
G
= 47
Ω
T
VJ
= 125°C
Z
thJC
1
IGBT
0,1
0,01
20
single pulse
0,001
0
0
200
400
600
V
CE
42T120
800 1000 1200 1400
V
0,0001
0,00001 0,0001 0,001
MDI...50-12P1
0,01
0,1
t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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