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A046AJ-00

Description
NPN SILICON TRANSISTOR
File Size20KB,1 Pages
ManufacturerHuashan ( SHEDCL )
Websitehttp://www.huashan.com.cn/
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A046AJ-00 Overview

NPN SILICON TRANSISTOR

汕头华汕电子器件有限公司
PNP
SILICON
TRANSISTOR
5401
晶½管芯片说明书
█ 芯片简介
芯片尺寸:4 英寸(100mm)
芯片代码:A046AJ-00
芯片厚度:240±20µm
管芯尺寸:460×460µm
2
焊½尺寸:B 极
110×110µm
2
;E 极
110×110µm
2
电极金属:铝
背面金属:金
典型封装:2N5401,H5401
█ 管芯示意图
█ 极限值
(T
a
=25℃)
(封装½式:TO-92)
T
stg
——贮存温度………………………………………
-55~150℃
T
j
——结温……………………………………………………150℃
P
C
——集电极耗散功率……………………………………625mW
V
CBO
——集电极—基极电压…………………………………-160V
V
CEO
——集电极—发射极电压………………………………-150V
V
EBO
——发射极—基极电压……………………………………-5V
I
C
——集电极电流…………………………………………-600mA
█ 电参数
(T
a
=25℃)
(封装½式:TO-92)
参数符号
I
CBO
I
EBO
h
FE
号 说 明
最小值 典型值 最大值
-0.05
-0.05
30
60
50
280
-0.2
-0.5
-1
-1
-160
-150
-5
100
V
V
V
V
V
V
V
MHz
单½
µA
µA
测 试
条 件
集电极—基极截止电流
发射极—基极截止电流
直流电流增益
V
CE
(sat)
V
BE
(sat)
BV
CBO
BV
CEO
BV
EBO
f
T
集电极—发射极饱和电压
基极—发射极饱和电压
集电极—基极击穿电压
集电极—发射极击穿电压
发射极—基极击穿电压
特征频率
400
V
CB
=-120V,I
E
=0
V
EB
=-3V,I
C
=0
V
CE
=-5V,I
C
=-1mA
V
CE
=-5V,I
C
=-10mA
V
CE
=-5V,I
C
=-50mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
I
C
=-100µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10µA,I
C
=0
V
CE
=-10V,I
C
=-10mA
f=100MHz
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