IS62/65WV2568DALL
IS62/65WV2568DBLL
256K x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 35ns, 45ns, 55ns
• CMOS low power operation
– 36 mW (typical) operating
– 9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 1.8V ± 10% V
cc
(IS62/65WV2568DALL)
– 2.5V–3.6V V
cc
(IS62/65WV2568DBLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial temperature available
• Lead-free available
JUNE 2013
are high-speed, 2M bit static RAMs organized as
256K words by 8 bits. It is fabricated using
ISSI
's high-
performance CMOS technology. his highly reliable process
T
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) , the device assumes a standby mode at
which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
The IS62/65WV2568DALL and IS62/65WV2568DBLL are
packaged in the JEDEC standard 32-pin TSOP (TYPE I),
sTSOP (TYPE I), and 36-pin mini BGA.
DESCRIPTION
The
ISSI
IS62/65WV2568DALL and IS62/65WV2568DBLL
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 8
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CS2
CS1
OE
WE
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest
version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
CONTROL
CIRCUIT
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
05/24/2013
1
IS62/65WV2568DALL, IS62/65WV2568DBLL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
term
t
Stg
P
t
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Value
–0.2 to Vcc+0.3
–65 to +150
1.0
Unit
V
°C
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
OPERATING RANGE (Vcc)
Range
Commercial
Industrial
Automotive (A3)
Ambient Temperature
0°C to +70°C
–40°C to +85°C
–40°C to +125°C
IS62/65WV2568DALL
1.8V ± 10%
1.8V ± 10%
1.8V ± 10%
IS62/65WV2568DBLL
2.5V - 3.6V
2.5V - 3.6V
2.5V - 3.6V
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
V
oh
Output HIGH Voltage
V
oL
V
Ih
V
IL
(1)
I
LI
I
Lo
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Test Conditions
I
oh
=
-0.1 mA
I
oh
=
-1 mA
I
oL
=
0.1 mA
I
oL
=
1.0 mA
Vcc
1.8V ± 10%
2.5-3.6V
1.8V ± 10%
2.5-3.6V
1.8V ± 10%
2.5-3.6V
1.8V ± 10%
2.5-3.6V
Min.
1.4
2.2
—
—
1.4
2.2
–0.2
–0.2
–1
–1
Max.
—
—
0.2
0.4
V
cc
+ 0.2
V
cc
+ 0.3
0.4
0.6
1
1
Unit
V
V
V
V
V
V
V
V
µA
µA
GND ≤ V
In
≤
V
cc
GND ≤ V
out
≤
V
cc
,
Outputs Disabled
Notes:
For IS62/65WV2568DALL:
V
IL
(min.) = -1.0V Ac (pluse width < 10ns). Not 100% tested.
V
Ih
(max.) = V
cc
+ 1.0V Ac; (pluse width < 10ns). Not 100% tested.
For IS62/65WV2568DBLL:
V
IL
(min.) = -2.0V Ac (pluse width < 10ns). Not 100% tested.
V
Ih
(max.) = V
cc
+ 2.0V Ac; (pluse width < 10ns). Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
05/24/2013
3
IS62/65WV2568DALL, IS62/65WV2568DBLL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
cc
I
SB
1
Parameter
Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
Test Conditions
V
cc
=
Max.,
I
out
= 0
mA, f = f
mAx
CS2 = VIL
f = 0Hz
Com.
Ind.
Auto.
typ.
(2)
Com.
Ind.
A
uto
.
Max.
35ns
15
20
25
10
0.1
0.2
0.3
7
10
–
Max.
45ns
12
15
20
8
0.1
0.2
0.3
7
10
30
3
Max.
55ns
10
12
15
6
0.1
0.2
0.3
7
10
30
Unit
mA
mA
I
SB
2
CMOS Standby
(1) 0V
<
CS2
< 0.2
V Com.
Current (CMOS Inputs) OR
Ind.
(2)
CS1
>
VDD - 0.2V, Auto.
cS2
>
VDD - 0.2V typ.
(2)
f= 0Hz
µA
Note:
1. At f = f
mAx
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
cc
= 3.0V, Ta = 25
o
C and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
05/24/2013
5
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