LE28CV1001DT-15 datasheet, PDF

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LE28CV1001DT-15: DescriptionLE28CV1001DT-15; Categorystorage storage; File Size177KB，18 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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LE28CV1001DT-15 Overview

LE28CV1001DT-15

LE28CV1001DT-15 Parametric

Parameter Name	Attribute value
Maker	ON Semiconductor
package instruction	,
Reach Compliance Code	compliant

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Preliminary Specifications

CMOS LSI

LE28CV1001DT/DTS-13/15

1M-Bit (128k × 8) Page Mode EEPROM

Features

Single 3.3-Volt Read and Write Operations

CMOS Flash EEPROM Technology

Page-write Endurance Cycles: 10

10 Years Data Retention

Low Power Consumption:

Active Current: 20 mA (Max.)

Standby Current: 15

µA

(Max.)

Fast Page-Write Operation

128 Bytes per Page

Page-Write Cycle: 5 ms (typical)

Complete Memory Rewrite: 5 sec. (typical)

Fast Access Time: 130ns / 150 ns

Latched Address and Data

Automatic Write Timing with Internal V

Generation

End of Write Detection

Toggle Bit

DATA

Polling

Hardware and Software Data Protection

TTL I/O Compatibility

JEDEC Standard Byte-Wide EEPROM Pinouts

Packages Available

LE28CV1001DT : 32-pin TSOP (8mm × 20mm) Normal

LE28CV1001DTS: 32-pin TSOP (8mm × 14mm) Normal

Product Description

The LE28CV1001D is a 128K×8 CMOS page mode

EEPROM manufactured with SANYO's proprietary, high

performance CMOS Flash EEPROM Technology.

Breakthrough in EEPROM cell design and process

architecture attain better reliability and manufacturability

compared

with

conventional

approaches.

The

LE28CV1001D performs write in a 3.3-volt-only power

supply environment. Internal erase/program is transparent to

the user. The LE28CV1001D conforms to JEDEC standard

pinouts for byte-wide memories and is compatible with

existing industry standard EPROM, flash EPROM and

EEPROM pinouts.

Featuring high performance page write, the

LE28CV1001D provides an typical byte-write time of 39

sec. The entire memory, i.e.128K bytes, can be written in as

little as 5 seconds using interface such as Toggle Bit and

DATA

Polling to indicate the completion of a write cycle.

To protect against inadvertent write, the LE28CV1001D has

on-chip hardware and software data protection schemes.

Designed, manufactured and tested for a wide spectrum of

applications, the LE28CV1001D is offered with page-write

endurance 10

cycles. Data retention is rated at greater than

10 years.

The LE28CV1001D is best suited for application that

require reprogrammable nonvolatile storage of program or

data memory for laptop computers, desktop computers,

medical instruments, laser printers, or copiers. For all system

applications, the LE28CV1001D significantly improves

performance and reliability, while lowering power

consumption, when compared with floppy disk or EPROM

approaches. In addtion, the EEPROM technology makes

convenient and economical updating of codes and control

programs on-line possible. The LE28CV1001D improves

flexibility while lowering the cost for program and

configuration strage applications such as operating systems,

BIOS, control programs, software I/O drivers, fonts, or

archives.

To meet high density, surface mount requirements, the

LE28CV1001D is offered in 32-pin TSOP package.

Device Operation

Both the high and medium endurance parts are identical

in functionality and features. The LE28CV1001D is

compatible to industry standard pinout and functionality.

*This product incorporate technology licensed from Silicon Storage Technology, Inc.

This preliminary specification is subject to change without notice.

SANYO Electric Co., Ltd. Semiconductor Business Headquarters

1-1, 1 Chome, Sakata, Oizumi-machi, Ora-gun, GUNMA, 370-0596 JAPAN

Revision 2.10-January 10, 2001 -AY/ay-1/16

LE28CV1001DT-15 Related Products

	LE28CV1001DT-15	LE28CV1001DT-13
Description	LE28CV1001DT-15	LE28CV1001DT-13
Maker	ON Semiconductor	ON Semiconductor
Reach Compliance Code	compliant	compliant

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