Optical Monitoring Photodiode Chip
KIP-M25-1
Description
KIP-M25-1
is InGaAs PIN Photodiode chip with
□250
um active square.
It is recommended for optical data communication and power monitoring.
Features
Front illuminated planar PIN-PD
Low capacitance and low dark current
High reliability and environmental endurance
Wide operating wavelength range from 1.1mm to 1.6mm
Applications
Optical Data Communications
Optical power monitoring
Absolute Maximum Ratings
Symbol
Parameter
V
R
Reverse Voltage
P
max
Maximun Optical Power Input
I
F
Forward Current
T
opr
Operating Temperature
T
stg.
Storage Temperature
Die- Attach Temperature *1
*1 : Attach Temperature Time
≤
60 seconds max
Ratings
20
30
10
-40 ~ +85
-40 ~ +100
300
Unit
V
mW
mA
℃
℃
℃
Electro-Optical Characteristics
Symbol Min. Typ. Max.
Parameter
Active area
D
□
250
I
D
0.1
1.0
Dark Current
0.85 0.90
1.31um
Responsivity
S
0.90 0.95
1.55um
f
h,-3dB
-
0.1
3dB Cut off frequency
0.5
Capacitance
Cp
5
7
* These specifications are subject to change without notice.
Physical Dimension Properties
Parameter
Active area
Chip Size
bonding Pad Size (Ø)
Chip Thickness
Ordering information
KIP
KODENSHI
InGaAs
PIN Photodiode
Chip
Unit
㎛
nA
mA/mW
GHz
pF
Condition
@ V
R
=5V, 25℃
@ V
R
=5V, 25℃
@V
R
=5, RL=50Ω
@ V
R
=5V, f=1MHz
Symbol
D
-
-
t
Typ.
□
250
420 x 420
100
120
Unit
㎛
㎛
2
㎛
㎛
Data Rate
M: Monitoring
1: 1.5 Gbps
2: 2.5 Gbps
Carrier type
Active area
05: Ø50
㎛
1: chips in gel pack
07: Ø75
㎛
25:
□
250 sq
㎛
2: chips on
submounter
3: chips on blue tape
1/1
For more information on other parts available, please visit our website:
www.kodenshi.co.kr
Rev.002
KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea
PCB Design
京公网安备 11010802033920号
EEWORLD
