NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
█
APPLICATIONS
High Voltage Swltching .
HBU406
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
TO-220
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation Tc=25℃）
（
……………………………60W
V
CBO
——Collector-Base
Voltage………………………………400V
V
CEO
——Collector-Emitter
Voltage……………………………200V
V
EBO
——Emitter-Base
Voltage………………………………………6V
I
C
——Collector
Current（DC）………………………………………7A
I
CP
——Collector
Current
（Pulse）
……………………………………10A
Ib——Base Current……………………………………………… 4A
1―Base，B
2―Collector，
C
3―Emitter，E
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
I
CES（2）
I
CES（3）
I
EBO
H
FE
V
BE(on)
f
T
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Turn OFF Time
Characteristics
Min Typ Max Unit
１０
１０
５
１
１
１
１．２
Test Conditions
I
CES（1）
Collector Cut-off Current
½Ａ
V
CE
=400V, V
EB
=0
１００ μＡ
V
CE
=250V, V
EB
=0
½Ａ
V
CE
=250V, V
EB
=0
（Tc=125℃）
½Ａ
V
EB
=6V, I
C
=0
Ｖ
Ｖ
V
CE
=1V, I
C
=5A
I
C
=5A, I
B
=0.5A
V
CE
=5V, I
C
=0.5A
V
CE(sat)
Collector- Emitter Saturation Voltage
t
OFF
ＭＨ½
V
CE
=10V,I
C
=0.5A
０．７５ μＳ
I
C
=5A, I
B
=0.5A
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