2SAR542P
Electrical
characteristic curves
-5.0mA
-0.50
-0.45
-2.5mA
-2.0mA
1000
Ta=25°C
1000
V
CE
= -2V
Data Sheet
COLLECTOR CURRENT : I
C
[A]
-0.35
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0.0
-0.5
-1
-1.5
-1.5mA
-1.0mA
100
V
CE
= -5V
-2V
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
-0.40
100
Ta=125°C
75°C
25°C
-40°C
-0.5mA
10
-2.0
-1
-10
-100
-1000
-10000
10
-1
-10
-100
-1000
-10000
COLLECTOR CURRENT : I
C
[mA]
Fig3. DC Current Gain vs.
Collector Current (
ΙΙ
)
COLECTOR TO EMITTER VOLTAGE : V
CE
[V]
Fig.1 Typical Output Characteristics
COLLECTOR CURRENT : I
C
[mA]
Fig.2 DC Current Gain vs.
Collector Current (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)[V]
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)[V]
-1
Ta=25°C
-1
I
C
/I
B
=20
-10000
V
CE
= -2V
Ta=125°C
75°C
25°C
-40°C
COLLECTOR CURRENT : I
C
[mA]
-10000
-1000
-0.1
-0.1
-100
-0.01
I
C
/I
B
=50
20
10
-0.01
Ta=125°C
75°C
25°C
-40°C
-10
-0.001
-1
-10
-100
-1000
-10000
-0.001
-1
-1
-10
-100
-1000
0.3
-0.2
-0.7
-1.2
COLLECTOR CURRENT : I
C
[mA]
BASE TO EMITTER VOLTAGE : V
BE
[V]
Fig.6 Ground Emitter Propagation
Characteristics
COLLECTOR CURRENT : I
C
[mA]
Fig.4 Collector-Emitter Saturation Voltage
vs. Collector Current (
Ι
)
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current (
ΙΙ
)
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
1000
EMITTER INPUT CAPACITANCE : Cib(pF)
COLLECTOR CURRENT : I
C
[A]
Cib
TRANSITION FREQUENCY : f
T
[MHz]
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
1000 Ta=25°C
V
CE
= -10V
-100
Single pulse
1ms
-10
10ms
-1
DC Ta=25°C
(Mounted on a
recommended land)
DC Ta=25°C
(Mounted on a ceramic board)
-0.01
-0.1
-1
-10
-100
100ms
100
100
Cob
10
-0.1
1
-0.1
-1
-10
-100
10
10
100
EMITTER CURRENT : I
E
[mA]
Fig.8 Gain Bandwidth Product vs.
Emitter Current
1000
COLLECTOR - BASE VOLTAGE : V
CB
[V]
EMITTER - BASE VOLTAGE : V
EB
[V]
Fig.7 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage
COLLECTOR TO EMITTER VOLTAGE : V
CE
[V]
Fig.9 Safe Operating Area
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2009.12 - Rev.A
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