ISP814X,ISP824X,ISP844X3,2,1
ISP814,ISP824,ISP844-3,-2,-1
LOW INPUT CURRENT A.C. INPUT
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead form : -
- STD
- G form
-
SMD approved to CECC 00802
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Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P96102022
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
DESCRIPTION
The ISP814-3,-2,-1, ISP824-3,-2,-1, ISP844-3,-2,-1
series of optically coupled isolators consist of two
infrared light emitting diodes connected in inverse
parallel and NPN silicon photo transistors in space
efficient dual in line plastic packages.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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Low input current ± 0.25mA I
F
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
OPTION SM
OPTION G
7.62
ISP814X3,2,1
ISP814-3,2,1
2.54
7.0
6.0
1
2
Dimensions in mm
4
3
1.2
5.08
4.08
7.62
4.0
3.0
0.5
3.0
3.35
ISP824X3,2,1
0.5
ISP824-3,2,1
2.54
1
7.0
6.0
1.2
10.16
9.16
4.0
3.0
0.5
3.0
0.5
3.35
1
0.26
16
15
14
13
12
11
10
9
7.62
13°
Max
2
3
4
7.62
8
7
6
5
0.26
13°
Max
ISP844X3,2,1
ISP844-3,2,1
2.54
2
3
4
5
7.0
6.0 6
7
8
SURFACE MOUNT
1.2
20.32
19.32
4.0
3.0
0.5
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
3.0
0.5 3.35
13°
Max
0.26
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92449m-AAS/A4
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Power Dissipation
± 50mA
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
MIN TYP MAX UNITS
1.2
1.4
V
TEST CONDITION
I
F
= ± 20mA
70V
6V
150mW
Output
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
70
6
100
V
V
nA
I
C
= 1mA
I
E
= 100
µ
A
V
CE
= 20V
± 0.25mAI
F
,0.4V V
CE
± 0.5mA I
F
, 0.4V V
CE
± 1.0mA I
F
, 0.4V V
CE.
± 0.5mA I
F
, 0.4V V
CE
± 1.0mA I
F
, 0.4V V
CE
± 1.0mA I
F
, 0.4V V
CE
± 0.25mAI
F
,0.05mAI
C
± 0.5mA I
F
, 0.2mA I
C
± 1.0mA I
F
, 0.8mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CE
= 2V ,
I
C
=0.05mA,R
L
=100
Ω
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Coupled
Current Transfer Ratio (CTR) (Note 2)
ISP814-3, ISP824-3, ISP844-3
20
40
80
40
80
%
%
%
%
%
%
V
V
V
V
RMS
V
PK
Ω
µ
s
µ
s
ISP814-2, ISP824-2, ISP844-2
ISP814-1, ISP824-1, ISP844-1
80
Collector-Emitter Saturation Voltage-3
-2
-1
Input to Output Isolation Voltage V
ISO
5300
7500
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time tr
Output Fall Time tf
0.4
0.4
0.4
4
3
18
18
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/12/00
DB92449m-AAS/A4
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
1.0
150
Collector current I
C
(mA)
0.8
0.6
Collector Current vs. Low
Collector-emitter Voltage
T
A
= 25°C
I
F
= ±1.0mA
100
I
F
= ±0.5mA
0.4
0.2
0
50
I
F
= ±0.25mA
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
Relative current transfer ratio
50
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.42
0.36
0.30
0.24
0.18
0.12
0.06
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
7/12/00
0
0.2
0.4
0.6
0.8
1.0
Collector-emitter voltage V
CE
( V )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Forward current I
F
(±mA)
I
F
= ±1mA
V
CE
= 0.4V
1.0
0.5
0
-30
0
25
50
75
Ambient temperature T
A
( °C )
100
Current Transfer Ratio vs. Forward Current
120
Current transfer ratio CTR (%)
Collector-emitter saturation voltage V
CE(SAT)
(V)
I
F
= ±1mA
I
C
= 0.8mA
100
80
60
40
20
0
0.1
0.2
0.5
1
2
Forward current I
F
(±mA)
5
V
CE
= 0.4V
T
A
= 25 °C
DB92449m-AAS/A4
Microcontroller MCU
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