600V 15A
APT15DQ60B
APT15DQ60S
APT15DQ60BG* APT15DQ60SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
(B)
TO
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• PFC
PRODUCT FEATURES
• Ultrafast Recovery Times
• Soft Recovery Characteristics
PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
1
2
-2 4
7
D
3
PAK
• Cooler Operation
• Popular TO-247 Package or
Surface Mount D
3
PAK Package
• Higher Reliability Systems
• Low Forward Voltage
• Low Leakage Current
• Avalanche Energy Rated
• Increased System Power
Density
1
2
(S)
1
2
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
Symbol
V
R
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FSM
E
AVL
T
J
,T
STG
T
L
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
All Ratings: T
C
= 25°C unless otherwise specified.
APT15DQ60B_S(G)
UNIT
600
Volts
Maximum Average Forward Current (T
C
= 129°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
15
30
110
20
-55 to 175
300
mJ
°C
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
I
F
= 15A
V
F
Forward Voltage
I
F
= 30A
I
F
= 15A, T
J
= 125°C
I
RM
C
T
Maximum Reverse Leakage Current
Junction Capacitance, V
R
= 200V
V
R
= 600V
V
R
= 600V, T
J
= 125°C
MIN
TYP
MAX
UNIT
2.0
2.5
1.56
2.4
Volts
25
500
25
Microsemi Website - http://www.microsemi.com
053-4200 Rev D
pF
7-2006
µA
DYNAMIC CHARACTERISTICS
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
I
F
= 15A, di
F
/dt = -1000A/µs
V
R
= 400V, T
C
= 125°C
I
F
= 15A, di
F
/dt = -200A/µs
V
R
= 400V, T
C
= 125°C
I
F
= 15A, di
F
/dt = -200A/µs
V
R
= 400V, T
C
= 25°C
Test Conditions
I
F
= 1A, di
F
/dt = -100A/µs, V
R
= 30V, T
J
= 25°C
MIN
-
APT15DQ60B_S(G)
TYP
15
MAX
UNIT
ns
nC
-
-
-
-
-
-
-
-
-
19
21
2
105
250
5
55
420
15
-
-
Amps
ns
nC
Amps
ns
nC
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
θJC
W
T
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Package Weight
MIN
TYP
MAX
UNIT
°C/W
oz
g
1.35
0.22
5.9
10
1.1
lb•in
N•m
Torque
Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
1.40
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
1.20
1.00
0.80
0.60
0.40
0.20
0
0.3
D = 0.9
0.7
0.5
Note:
PDM
t1
t2
0.1
0.05
10
-5
10
-4
SINGLE PULSE
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
T
J
(°C)
T
C
(°C)
0.583
0.767
7-2006
Dissipated Power
(Watts)
0.00222
0.0598
053-4200 Rev D
Z
EXT
are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Z
EXT
TYPICAL PERFORMANCE CURVES
60
50
I
F
, FORWARD CURRENT
(A)
T
J
= 175°C
40
30
20
10
0
T
J
= 125°C
t
rr
, REVERSE RECOVERY TIME
(ns)
140
120
30A
100
80
60
40
20
0
15A
APT15DQ60B_S(G)
T =125°C
J
V =400V
R
7.5A
T
J
= -55°C
0
T
J
= 25°C
1
2
3
4
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
T =125°C
J
V =400V
R
0 200 400 600 800 1000 1200 1400 1600
-di
F
/dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
25
I
RRM
, REVERSE RECOVERY CURRENT
(A)
T =125°C
J
V =400V
R
700
Q
rr
, REVERSE RECOVERY CHARGE
(nC)
600
500
400
300
200
100
0
30A
20
30A
15
15A
10
15A
7.5A
7.5A
5
0 200 400 600 800 1000 1200 1400 1600
-di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
0 200 400 600 800 1000 1200 1400 1600
-di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
35
30
25
Duty cycle = 0.5
T =175°C
J
0
1.2
K
f
, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
1.0
0.8
I
RRM
0.6
t
rr
0.4
0.2
0.0
Q
rr
t
rr
Q
rr
I
F(AV)
(A)
20
15
10
5
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
0
25
50
90
C
J
, JUNCTION CAPACITANCE
(pF)
80
70
60
50
40
30
20
10
10
100 200
V
R
, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
7-2006
1
053-4200 Rev D
0
Vr
+18V
0V
D.U.T.
30µH
di
F
/dt Adjust
APT6017LLL
APT15DQ60B_S(G)
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
2
3
4
I
F
- Forward Conduction Current
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
RRM
- Maximum Reverse Recovery Current.
Zero
1
4
5
3
2
trr - Reverse
Recovery
Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Qrr - Area Under the Curve Defined by I
RRM
and trr.
0.25 IRRM
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
D PAK Package Outline
e3 100% Sn
4.90 (.193)
5.10 (.201)
1.45 (.057)
1.60 (.063)
15.85 (.624)
16.05(.632)
13.30 (.524)
13.60(.535)
3
Cathode
(Heat Sink)
1.00 (.039)
1.15(.045)
Cathode
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
18.70 (.736)
19.10 (.752)
0.40 (.016)
0.65 (.026)
12.40 (.488)
12.70 (.500)
7-2006
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
20.32 (.800)
0.020 (.001)
0.250 (.010)
2.70 (.106)
2.90 (.114)
1.15 (.045)
1.45 (.057)
1.20 (.047)
1.90 (.075) 1.40 (.055)
2.10 (.083)
5.45 (.215) BSC
(2 Plcs.)
2.40 (.094)
2.70 (.106)
(Base of Lead)
053-4200 Rev D
Anode
2.21 (.087)
2.59 (.102)
Heat Sink (Cathode)
and Leads
are Plated
Cathode
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
Anode
Cathode
Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
MCU
京公网安备 11010802033920号
EEWORLD
