Power Transistor (100V, 2A)
2SD1980 / 2SD1867
Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1316.
inner circuit
0.9
Dimensions
(Unit : mm)
2SD1980
6.5
5.1
2.3
0.5
5.5
1.5
C
0.75
B
0.9
(1)
2.3
(2)
(3)
2.3
0.8Min.
0.5
1.0
0.65
R
1
R
1
3.5kΩ
R
2
300Ω
R
2
E
B : Base
C : Collector
E : Emitter
2.5
1.5
1.0
0.9
0.5
9.5
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
2SD1980
Symbol
VCBO
VCEO
VEBO
IC
Limits
100
100
6
2
3
∗1
1
10
1
∗2
150
−55
to
+150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25°C)
W
°C
°C
2SD1867
6.8
2.5
0.65Max.
PC
Tj
Tstg
2SD1867
Junction temperature
Storage temperature
(1)
(2)
2.54
(3)
2.54
1.05
0.45
∗
1 Single pulse Pw
=
100ms
∗
2
Printed circuit board, 1.7mm thick, collector plating 100mm
2
or larger.
Taping specifications
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
∗
Denotes h
FE
14.5
4.4
2SD1980
CPT3
1k to 10k
−
TL
2500
2SD1867
ATV
1k to 10k
−
TV2
2500
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltag
Base-Emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
Symbol
BV
CBO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
Min.
100
100
6
−
−
−
−
1000
−
−
Typ.
−
−
−
−
−
−
−
−
80
25
Max.
−
−
−
10
3
1.5
2.0
10000
−
−
Unit
V
V
V
µA
mA
V
V
−
MHz
pF
Conditions
I
C
=
50µA
I
C
=
5mA
I
E
=
5mA
V
CB
=
100V
V
EB
=
5V
I
C
=
1A , I
B
=
1mA
∗
I
C
/I
B
=
1A/1mA
V
CE
=
2V , I
C
=
1A
∗
V
CE
=
5V , I
E
= −0.1A
, f
=
30MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
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○
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.12 - Rev.C
2SD1980 / 2SD1867
Electrical characteristic curves
2.0
Data Sheet
Ta=25°C
A
1m
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
1.6
COLLECTOR CURRENT : I
C
(A)
A
0.9m
A
0.8m
A
0.7m
mA
0.6
A
0.5m
A
0.4m
10
5
2
1
00
°
V
CE
=2V
10000
5000
2000
1000
500
200
100
50
Ta=25°C
V
CE
=4V
2V
C
Ta=
1
1.2
0.5
0.2
0.1
0.05
0.02
0.8
A
IB=0.3m
0.4
25
°
C
−
25
°
C
0
0.01
0
1
2
3
4
5
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
20
10
0.001
0.01
0.1
1
10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Grounded emitter output
characteristics
Fig.2 Grounded emitter propagation
characteristics
Fig.3 DC current gain vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
V
CE
=2V
Ta=25
°C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
10000
5000
100
50
20
10
5
100
50
20
10
5
2
1
0.5
0.2
0.1
0.0.1 0.0.2 0.0.5 0.1 0.2
0.5
1
25
°C
100
°C
I
C
/I
B
=1000
DC CURRENT GAIN : h
FE
2000
1000
25
°
C
500
200
100
50
20
Ta
=1
00
°
C
I
C
/I
B
=1000
2
1
0.5
0.2
0.1
0.0.1 0.0.2 0.0.5 0.1 0.2
0.5
1
2
5
10
−
2
5
°
C
Ta=
−
25
°C
500
10
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
2
5
10
2
5
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current
Fig.5 Collector-emitter saturation voltage
vs.collector current
Fig.6 Collector-emitter saturation voltage
vs.collector current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
500
200
100
Ta=25
°C
f=1MHz
I
E
=0A
3
2
1
I
C Max
Pulse
I
C Max
=1
Pw
s
0m
Pw
=1
0.5
00
m
s
I
C
(A)
50
20
10
5
2
1
0.1
0.2
0.5
1
2
5
10
20
50 100
DC
0.2
0.1
0.05
Ta=25°C
∗
Single Nonrepetitive
Pulse
1
2
5
10
20
50
100
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
V
CE
(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Fig.8 Safe operating area(2SD1867)
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○
2009 ROHM Co., Ltd. All rights reserved.
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2009.12 - Rev.C
Notice
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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