Medium Power Transistor
(Motor, Relay drive) (60±10V, 2A)
2SD2143 / 2SD1866
Features
1) Built-in zener diode between collector and base.
2) Strong protection against reverse surges due to "L"
loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
Absolute maximum ratings
(Ta=25°C)
1.0
0.5
Dimensions
(Unit : mm)
0.9
0.75
2SD2143
(1)
2.3
5.5
1.5
5.1
(2)
0.9
(3)
2.3
0.65
C0.5
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SD2143
V
CBO
V
CEO
V
EBO
I
C
60
±
10
60
±
10
6
2
3
1
10
1
∗2
∗1
V
V
V
A (DC)
A (Pulse)
W
W (Tc=25
°C)
W
°C
°C
ROHM : CPT3
EIAJ : SC-63
0.5
1.5
2.5
9.5
2.3
Parameter
Symbol
Limits
Unit
0.8Min.
P
C
2SD1866
Tj
Tstg
2SD1866
6.8
2.5
Junction temperature
Storage temperature
150
−55
to
+
150
∗
1 Single pulse Pw=100ms
∗
2 Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger.
0.65Max.
Packaging specifications and h
FE
Type
Package
h
FE
1.0
0.9
2SD2143
CPT3
1k to 10k
−
TL
2500
2SD1866
ATV
1k to 10k
−
TV2
2500
(1)
(2)
2.54
(3)
2.54
0.5
14.5
4.4
1.05
6.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
0.45
Marking
Code
Basic ordering unit (pieces)
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Inner circuit
C
B
R
1
E : Emitter
B : Base
C : Collector
R
1
R
2
R
2
E
3.5kΩ
300Ω
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
50
50
−
−
−
1000
−
−
Typ.
−
−
−
−
−
−
80
25
Max.
70
70
1.0
3
1.5
10000
−
−
Unit
V
V
µA
mA
V
−
MHz
pF
I
C
=50µA
I
C
=5mA
V
CB
=40V
V
EB
=5V
I
C
/I
B
=1A/1mA
Conditions
∗
Transition frequency
Output capacitance
∗
Measured using pulse current.
V
CE
=2V,
I
C
=1A
V
CE
=5V,
I
E
= −0.1A,
f=30MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
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2009 ROHM Co., Ltd. All rights reserved.
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2009.11 - Rev.B
2SD2143 / 2SD1866
Electrical characteristics curves
2.0
1.8
COLLECTOR CURRENT : I
C
(A)
500µA
450µA
400µA
µ
300
A
Data Sheet
Ta=25°C
2.0
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : Ic (A)
500µA
1.8
450µA
400µA
1.6
350µA
3
µ
A
00
Ta=25°C
A
5
V
CE
=2V
2
1
0.5
Ta=
100
˚C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
2
A
250
µ
25
0
µ
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
I
B
00
µ
A
I
B
=2
0
µ
A
=20
0.2
0.1
0.05
25˚C
0.01
3
4
5
2
4
6
8
10
0.001
0.5
1
1.5
−
25˚
C
2
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Groundede emitter output
characteristics (
Ι
)
Fig.2 Grounded emitter output
characteristics (
ΙΙ
)
Fig.3 Grounded emitter propagation
characteristics
10000
5000
Ta=25°C
V
CE
=4V
10000
5000
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(V)
V
CE
=2V
100
50
20
10
5
2
I
C
/I
B
=1000
Ta=25°C
DC CURRENT GAIN : h
FE
2000
1000
500
200
100
50
20
10
0.001
0.01
0.1 0.2 0.5 1 2
5 10
V
CE
=2V
DC CURRENT GAIN : h
FE
2000
1000
500
Ta
=
1
200
100
50
20
10
0.001
00
°
C
25°C
−
2
5
°
C
1
0.5
0.2
500
0.01
0.1 0.2 0.5 1 2
5 10
0.01
0.1 0.2 0.5 1
2
5 10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain
vs. collector current (
Ι )
Fig.5 DC current gain
vs. collector current (
ΙΙ )
Fig.6 Collector-emitter saturation
voltage vs. collector current
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(V)
I
C
/I
B
=1000
COLLECTOR OUTPUT
CAPACITANCE : C
ob
(pF)
100
50
20
10
5
2
1
200
100
COLLECTOR CURRENT : Ic (A)
Ta=25°C
I
E
=0A
f=1MHz
10
5
2
1
500m
200m
100m
50m
20m
10m
5m
Ta=25°C
Single
Nonrepetitive
Pulse
Ic max (pulse)
DC
Pw
=1
00
m
Pw=
1mS
=1
Pw
50
S
0m
S
Ta=
−25°C
100°C
20
0.5
0.2
10
25°C
0.01
0.1 0.2 0.5 1
2
5 10
5
0.05 0.1 0.2
0.5
1
2
5
10 20
50
2m
1m
0.1 0.2 0.5 1 2
5 10 20
50 100 200 500 1000
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 Collector-emitter saturation
voltage vs. collector current
Fig.8 Collector output capacitance
vs. collector-base voltage
Fig.9 Safe operating area (A. S. O)
2SD2143 (CPT)
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2009 ROHM Co., Ltd. All rights reserved.
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2009.11 - Rev.B
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
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Please be sure to implement in your equipment using the Products safety measures to guard
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