2SD2537
Transistors
Medium Power Transistor (25V, 1.2A)
2SD2537
Features
1) High DC current gain.
2) High emitter-base voltage. (V
EBO
=12V)
3) Low saturation voltage.
(Max. V
CE(sat)
=0.3V at I
C
/I
B
=500mA/10mA)
Dimensions
(Unit : mm)
2SD2537
4.5
1.6
0.5
1.5
(1)
(2)
(3)
1.0
2.5
4.0
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1
Single
pulse Pw=100ms
0.4
0.4
0.5
1.5
3.0
1.5
0.4
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
25
12
1.2
2
0.5
2
150
−55
to
+150
Unit
V
V
V
A (DC)
A (Pulse)
∗
1
W
W
°C
°C
∗
2
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
∗2
When mounted on a 40×40×0.7mm ceramic board.
Packaging specifications and h
FE
Type
2SD2537
MPT3
V
DV
T100
1000
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Measured
using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
Min.
30
25
12
−
−
−
−
820
−
−
Typ.
−
−
−
−
−
−
−
−
200
20
Max.
−
−
−
0.3
0.3
0.3
1.2
1800
−
−
Unit
V
V
V
µA
µA
V
V
−
MHz
pF
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=30V
V
EB
=12V
Conditions
I
C
/I
B
=500mA/10mA
I
C
/I
B
=0.5A/10mA
V
CE
/I
C
=5V/0.5A
V
CE
=10V,
I
E
=−50mA,
f=100MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
∗
∗
Rev.C
1/3
2SD2537
Transistors
Electrical characteristics curves
2.0
COLLECTOR CURRENT : I
C
(mA)
Ta=25°C
2.0
2.0µA
3.5m
A
2000
COLLECTOR CURRENT : I
C
(A)
1.6
1.8µA
1.6µA
1.6
4.0mA
4.5mA
5.0mA
2.5mA
2.0mA
COLLECTOR CURRENT : I
C
(mA)
A
3.0m
1000
500
200
100
V
CE
=
5V
Pulsed
1.2
1.4µA
1.2µA
1.0µA
1.2
1.5mA
Ta
=
10
0
°
C
0.2
0.4
−
25
°
C
50
20
10
5
2
0
0.8
0.8µA
0.4
0.6µA
0.4µA
0
0
0.1
0.2
0.2µA
0.3
I
B
=0
0.4
0.5
0.8
1.0mA
0.4
0.5mA
I
B
=0
0.3
Ta=25°C
Pulsed
0.4
0.5
0
0
0.1
0.2
0.6
25
°
C
0.8
1.0
1.2
1.4
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Ground emitter output characteristics( )
Fig.2 Ground emitter output characteristics (
)
Fig.3 Ground emitter propagation characteristics
COLLECTOR SATURATION VOLTAGE : V
BE(sat)
(mV)
10000
5000
DC CURRENT GAIN : h
FE
Ta=25°C
Pulsed
10000
5000
Ta=100°C
25°C
V
CE
=5V
Pulsed
1000
500
200
100
50
I
C
/I
B
=100
20
10
5
2
1
2
5
10
20
50 100 200
10
Ta=25°C
Pulsed
DC CURRENT GAIN : h
FE
2000
1000
500
200
100
50
20
10
2
5
10
20
V
CE
=10V
1V
5V
3V
2000
1000
500
200
100
50
20
10
−25°C
50
50 100 200
500 1000 2000
2
5
10
20
50 100 200
500 1000 2000
500 1000 2000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current (
)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : V
BE(sat)
(mV)
BASE SATURATION VOLTAGE : V
BE(sat)
(mV)
500
200
100
50
20
10
5
2
1
2
5
10
20
50 100 200
−25°C
Ta=100°C
25°C
5000
2000
1000
500
100
200
100
50
20
10
2
5
10
20
50 100 200
I
C
/I
B
=10
50
Ta=25°C
Pulsed
BASE SATURATION VOLTAGE : V
BE(sat)
(mV)
1000
I
C
/I
B
=50
Pulsed
10000
10000
5000
2000
1000
500
100
200
100
50
20
10
2
5
10
20
50 100 200
Ta=
−25°C
50
I
C
/I
B
=50
Pulsed
500 1000 2000
500 1000 2000
500 1000 2000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation voltage
vs. collector current ( )
Fig.8 Base-emitter saturation voltage
vs. collector current ( )
Fig.9 Base-emitter saturation voltage
vs. collector current ( )
Rev.C
2/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1