Medium Power Transistor (60V, 2A)
2SD2391
Features
1) Low saturation voltage , typically
V
CE (sat)
=0.13V at I
C
/ I
B
=1A /50mA.
2) Collector-emitter voltage =60V
3) Pc = 2W (on 40400.7mm ceramic board).
4) Complements the 2SB1561.
Dimensions
(Unit : mm)
MPT3
4.5
1.6
0.5
1.5
(1)
(2)
(3)
1.0
2.5
4.0
0.4
0.4
1.5
0.5
1.5
3.0
0.4
(1)Base
(2)Collector
(3)Emitter
Absolute
maximum ratings
(Ta=25C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
+
Limits
60
60
6
2
6
0.5
2
150
−55
to
+150
Unit
V
V
V
A
A
W
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
+
∗
1
∗
2
°C
°C
∗1
Single pulse, Pw=10ms
∗2
When mounted on a 40 40 0.7mm ceramic board.
Electrical
characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE1
h
FE2
f
T
Cob
Min.
60
60
6
−
−
−
120
45
−
−
Typ.
−
−
−
−
−
0.13
−
−
210
21
Max.
−
−
−
0.1
0.1
0.35
270
−
−
−
Unit
V
V
V
μA
μA
V
−
−
MHz
pF
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=50V
Conditions
V
EB
=5V
I
C
/I
B
=1A/50mA
V
CE
/I
C
=−2V/−0.5A
V
CE
/I
C
=−2V/−1.5A
V
CE
=2V,
I
E
=−0.5A,
f=100MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
∗
∗
Packaging
specifications and h
FE
Type
2SD2391
MPT3
Q
DT
∗
T100
1000
∗
Denotes h
FE
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
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2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.12 - Rev.A
2SD2391
Electrical characteristic curves
2.0
Data Sheet
COLLECTOR CURRENT : l
C
(A)
COLLECTOR CURRENT : I
C
(A)
20
m
A
mA
16mA
18
14mA
12mA
10mA
5
2
1
500m
V
CE
=2V
1000
500
Ta=100
°C
V
CE
=2V
1.6
8mA
6mA
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
25
°C
−40°C
100m
50m
20m
10m
5m
2m
1m
0
0.8
4mA
0.4
I
B
=0mA
2mA
0.0
0
1
2
3
Ta=25°C
4
5
Ta
=
1
0
1.2
200m
0
°
C
25
°
C
−
40
°C
0.2 0.4 0.6
0.8 1.0
1.2
1.4 1.6
1
10m 20m
50m 100m 200m 500m 1
2
5
10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Grounded emitter output
characteristics
Fig.2 Grounded emitter propagation
characteristics
Fig.3 DC current gain vs.
collector current (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
1000
500
Ta=25
°C
1000
500
200
100
50
25°C
Ta=100°C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
I
C
/I
B
=20
1000
500
200
100
50
20
10
5
2
1
5m 10m 20m
50m100m 200m 500m 1
I
C
/I
B
=50
20
10
Ta=25°C
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
1
10m 20m
50m 100m 200m 500m 1
V
CE
=5V
2V
1V
20
10
5
2
1
5m 10m 20m
−40°C
2
5 10
50m 100m 200m 500m 1
2
5
2
5
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain
vs. collector current (
ΙΙ
)
Fig.5 Collector-emitter saturation
voltage vs. collector current (
Ι
)
Fig.6 Collector-emitter saturation
voltage vs. collector current (
ΙΙ
)
1000
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
TRANSITION FREQUENCY : f
T
(MHz)
500
200
100
50
20
10
5
2
1
−2m
−10m
−100m
500
Cib
200
100
50
20
10
5
2
1
0.1 0.2
0.5
1
2
5
10
20
Cob
COLLECTOR CURRENT : l
C
(A)
Ta=25°C
V
CE
=2V
1000
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
50
20
10
Ic max(Pulse)
P
W
5
=
2
1
500m
DC
10
Pw
m
=
1
P
W
s
s
0m
=
1
s
0m
200m
100m
50m
−1
−2
50 100
20m
Ta=25°C
Single pulse
10m
0.2 0.5 1 2
5
10 20
50 100 200 500
EMITTER CURRENT : I
E
(A)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 Gain bandwidth product
vs. emitter current
Fig.8 Iutput capacitance vs. voltage
Fig.9 Safe operating area
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2009 ROHM Co., Ltd. All rights reserved.
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2009.12 - Rev.A
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