Low Frequency Transistor (20V, 3A)
2SD2150
Features
1) Low V
CE(sat)
.
V
CE(sat)
= 0.2V(Typ.)
（I
C
/ I
B
= 2A / 0.1A）
2) Excellent current gain characteristics.
3) Complements the 2SB1424.
Dimensions(Unit
: mm)
2SD2150
0.5±0.1
4.5
+0.2
−0.1
1.6±0.1
1.5
+0.2
−0.1
4.0±0.3
2.5
+0.2
−0.1
(1)
(2)
(3)
0.4±0.1
1.5±0.1
Structure
Epitaxial planar type
NPN silicon transistor
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
40
20
6
3
5
0.5
Collector power dissipation
Junction temperature
Storage temperature
P
C
Tj
Tstg
2
150
−55
to
+150
Unit
V
V
V
A (DC)
A (Pulse)
W
W
1.0±0.2
0.4
+0.1
−0.05
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
(1) Base
(2) Collector
ROHM : MPT3
(3) Emitter
EIAJ : SC-62
Abbreviated symbol:
CF
∗
∗
Denotes h
FE
∗
1
∗
2
°C
°C
∗
1
∗
2
Single pulse Pw=10ms
Mounted on a 40×40×0.7mm Ceramic substrate.
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
40
20
6
−
−
−
120
−
−
Typ.
−
−
−
−
−
0.2
−
290
25
Max.
−
−
−
0.1
0.1
0.5
560
−
−
Unit
V
V
V
I
C
=50µ
A
I
C
=1mA
I
E
=50µ
A
V
CB
=30V
V
EB
=5V
I
C
/I
B
=2A/0.1A
V
CE
=2V,
I
C
=0.1A
V
CE
=2V,
I
E
= −0.5A,
f=100MHz
V
CE
=10V,
I
E
=0A,
f=1MHz
Conditions
µ
A
µ
A
V
−
MHz
pF
∗
∗
Measured using pulse current.
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○
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.11 - Rev.B
2SD2150
Packaging specifications and h
FE
Package
Code
Type
2SD2150
h
FE
RS
Basic ordering
unit (pieces)
Taping
T100
1000
Data Sheet
h
FE
values are classified as follows :
Item
h
FE
R
180 to 390
S
270 to 560
Electrical characteristic curves
10
5
V
CE
=2V
COLLECTOR CURRENT : I
C
(A)
2
20mA
18mA
16mA
14mA
COLLECTOR CURRENT : I
C
(A)
2
1
0.5
0.2
0.1
0.05
0.02
0.01
5m
2m
1m
0
Ta=100°C
25°C
−40°C
1.6
COLLECTOR CURRENT : I
C
(A)
Ta=25°C
12mA
10mA
8mA
6mA
5
50mA
45mA
40mA
4
Ta=25°C
35mA
30mA
25mA
20mA
15mA
10mA
1.2
4mA
0.8
2mA
0.4
I
B
=0A
1.0
3
2
5mA
1
I
B
=0A
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
0.2
0.4
0.6
0.8
0
0
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1
Grounded emitter propagation
characteristics
Fig.2
Grounded emitter output
characteristics ( )
Fig.3
Grounded emitter output
characteristics ( )
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
5000
2000
DC CURRENT GAIN : h
FE
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
V
CE
=
2V
2
1
0.5
0.2
0.1
50m
20m
10m
5m
Ta=100°C
25°C
−40°C
I
C
/I
B
=10
1
0.5
0.2
0.1
0.05
0.02
0.01
5m
2m
l
C
/l
B
=20
Ta=100°C
25°C
−40°C
1000
500
200
100
50
20
10
Ta=100°C
25°C
−40°C
5
1m 2m 5m0.010.02 0.05 0.10.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
2m
1m 2m 5m10m20m50m0.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
1m
1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
Fig.4
DC current gain vs.
collector current
Fig.5
Collector-emitter
saturation voltage vs.
collector current ( )
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
EMITTER INPUT CAPACITANCE : C
ib
(pF)
Fig.6
Collector-emitter
saturation voltage vs.
collector curren ( )
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
2
1
0.5
0.2
0.1
50m
20m
10m
5m
Ta=100°C
25°C
−40°C
TRANSITION FREQUENCY : f
T
(MHz)
I
C
/I
B
=50
1000
500
200
100
50
20
10
5
2
1
−1
−2
Ta=25°C
V
CE
=2V
1000
500
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
C
ob
200
100
C
ob
50
20
10
0.1 0.2
2m
1m 2m 5m10m20m50m 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
−5 −10 −20 −50−100 −200−500−1000
EMITTER CURRENT : I
E
(mA)
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7
Collector-emitter
saturation voltage vs.
collector current ( )
Fig.8
Gain bandwidth product vs.
emitter current
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
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○
2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.11 - Rev.B
Notice
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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