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2SD2670_1

Description
Low frequency amplifier
File Size51KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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2SD2670_1 Overview

Low frequency amplifier

2SD2670
Transistors
Low frequency amplifier
2SD2670
Application
Low frequency amplifier
Driver
External dimensions
(Unit : mm)
TSMT3
1.0MAX
2.9
0.4
0.85
0.7
Features
1) A collector current is large.
2) V
CE(sat)
: max.250mV
At lc=1.5A / l
B
=30mA
(1) Base
(2) Emitter
(3) Collector
(3)
1.6
2.8
0~0.1
(1)
(2)
0.95 0.95
1.9
0.16
Each lead has same dimensions
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power siddipation
Junction temperature
Range of storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
15
12
6
3
6
500
1
∗2
150
−55
to
+150
Unit
V
V
V
A
A
∗1
mW
W
°C
°C
∗1
Single pulse, Pw=1ms
∗2
Mounted on a 25×25×
t
0.8mm Ceramic substrate
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulse
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
15
12
6
270
Typ.
120
360
30
Max.
100
100
250
680
Unit
V
V
V
nA
nA
mV
MHz
pF
0.3~0.6
Conditions
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=15V
V
EB
=6V
I
C
=1.5A,
I
B
=30mA
V
CE
=2V,
I
C
=500mA
V
CE
=2V,
I
E
=−500mA,
f=100MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
Rev.C
1/2

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