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2SD2702_1

Description
General purpose amplification (12V, 1.5A)
File Size63KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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2SD2702_1 Overview

General purpose amplification (12V, 1.5A)

2SD2702
Transistors
General purpose amplification (12V, 1.5A)
2SD2702
Application
Low frequency amplifier
Dimensions
(Unit : mm)
Features
1) A collector current is large.
2) Collector saturation voltage is low.
<
V
CE(sat)
=
200mV
at I
C
=
500mA / I
B
=
25mA
ROHM : TUMT3
Abbreviated symbol
:
ES
0.2Max.
(1) Base
(2) Emitter
(3) Collector
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Limits
15
12
6
1.5
3
0.4
0.8
∗2
150
−55
to
+150
Unit
V
V
V
A
A
∗1
W
°C
°C
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SD2702
Taping
TL
3000
Range of storage temperature Tstg
∗1
Single pulse, P
W
=1ms
∗2
Mounted on a 25×25×
t
0.8mm Ceramic substrate
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulsed
Symbol Min.
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
15
12
6
270
Typ. Max. Unit
85
400
12
100
100
200
680
V
V
V
nA
nA
mV
pF
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=15V
V
EB
=6V
Conditions
I
C
/I
B
=500mA/25mA
V
CE
/I
C
=2V/200mA
V
CB
=10V,
I
E
=0A,
f=1MHz
MHz V
CE
=2V,
I
E
=−200mA,
f=100MHz
Rev.B
1/2

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