APTC60DSKM70CT1G
Dual buck chopper
Super Junction MOSFET
SiC chopper diode
V
DSS
= 600V
R
DSon
= 70mΩ max @ Tj = 25°C
I
D
= 39A @ Tc = 25°C
Application
•
AC and DC motor control
•
Switched Mode Power Supplies
Features
•
-
-
-
-
-
•
Ultra low R
DSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
•
•
•
Pins 3/4 must be shorted together
Benefits
•
Outstanding performance at high frequency operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Solderable terminals both for power and signal for
easy PCB mounting
•
Low profile
•
RoHS Compliant
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
Max ratings
600
39
29
160
±20
70
250
20
1
1800
Unit
V
A
V
mΩ
W
A
mJ
September, 2009
1–7
APTC60DSKM70CT1G – Rev 0
T
c
= 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
APTC60DSKM70CT1G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
DSS
R
DS(on)
V
GS(th)
I
GSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
V
GS
= 0V,V
DS
= 600V
V
GS
= 0V,V
DS
= 600V
Min
T
j
= 25°C
T
j
= 125°C
2.1
Typ
V
GS
= 10V, I
D
= 39A
V
GS
= V
DS
, I
D
= 2.7mA
V
GS
= ±20 V, V
DS
= 0V
3
Max
25
250
70
3.9
±100
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
Bus
= 300V
I
D
= 39A
Inductive Switching @ 125°C
V
GS
= 15V
V
Bus
= 400V
I
D
= 39A
R
G
= 5Ω
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 39A, R
G
= 5Ω
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 39A, R
G
= 5Ω
Min
Typ
7
2.56
0.21
259
29
111
21
30
283
84
402
980
657
1206
µJ
µJ
ns
nC
Max
Unit
nF
Chopper SiC diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
I
RM
I
F
V
F
Q
C
C
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Total Capacitive Charge
Total Capacitance
I
F
= 20A
Test Conditions
V
R
=600V
T
j
= 25°C
T
j
= 175°C
Tc = 100°C
Min
600
Typ
100
200
20
1.6
2
28
130
100
Max
400
2000
1.8
2.4
Unit
V
µA
A
September, 2009
2–7
APTC60DSKM70CT1G – Rev 0
T
j
= 25°C
T
j
= 175°C
I
F
= 20A, V
R
= 300V
di/dt =1800A/µs
f = 1MHz, V
R
= 200V
f = 1MHz, V
R
= 400V
V
nC
pF
www.microsemi.com
APTC60DSKM70CT1G
Thermal and package characteristics
Symbol
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
CoolMOS
SiC Diode
4000
-40
-40
-40
2.5
Min
Typ
Max
0.5
1.5
150
125
100
4.7
80
Unit
°C/W
V
°C
N.m
g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC
(see application note APT0406 on www.microsemi.com for more information).
Symbol
R
25
∆R
25
/R
25
B
25/85
∆B/B
Characteristic
Resistance @ 25°C
T
25
= 298.15 K
T
C
=100°C
R
T
=
R
25
⎡
⎛
1
1
⎞⎤
R
T
: Thermistor value at T
exp
⎢
B
25 / 85
⎜
− ⎟⎥
⎜
T
⎟
⎝
25
T
⎠⎦
⎣
T: Thermistor temperature
Min
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
SP1 Package outline
(dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–7
APTC60DSKM70CT1G – Rev 0
September, 2009
APTC60DSKM70CT1G
Typical Performance Curve
0.6
Thermal Impedance (°C/W)
0.5
0.4
0.3
0.2
0.1
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
0.0001
Single Pulse
0.001
0.01
0.1
1
10
0
0.00001
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
200
I
D
, Drain Current (A)
6.5V
6V
5.5V
Transfert Characteristics
140
I
D
, Drain Current (A)
120
100
80
60
40
20
0
0
1
T
J
=125°C
T
J
=25°C
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
160
120
80
V
GS
=15&10
V
5V
40
0
0
5
10
15
4.5V
4V
20
25
V
DS
, Drain to Source Voltage (V)
R
DS
(on) vs Drain Current
1.1
1.05
1
0.95
0.9
0
10
20
30
40
50
60
I
D
, Drain Current (A)
I
D
, DC Drain Current (A)
Normalized to
V
GS
=10V @ 19.5A
V
GS
=10V
2
3
4
5
6
V
GS
, Gate to Source Voltage (V)
7
R
DS
(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature
40
35
30
25
20
15
10
September, 2009
4–7
APTC60DSKM70CT1G – Rev 0
V
GS
=20V
5
0
25
50
75
100
125
T
C
, Case Temperature (°C)
150
www.microsemi.com
APTC60DSKM70CT1G
R
DS
(on), Drain to Source ON resistance
(Normalized)
Breakdown Voltage vs Temperature
BV
DSS
, Drain to Source Breakdown
Voltage (Normalized)
1.2
1.1
1.0
0.9
0.8
25
50
75
100
125
150
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.1
V
GS
(TH), Threshold Voltage
(Normalized)
1.0
0.9
0.8
0.7
0.6
25
50
75
100
125
150
T
C
, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
C, Capacitance (pF)
Ciss
Coss
ON resistance vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T
J
, Junction Temperature (°C)
Maximum Safe Operating Area
V
GS
=10V
I
D
= 39A
1000
I
D
, Drain Current (A)
100
limited by R
DS
on
100µs
10
Single pulse
T
J
=150°C
T
C
=25°C
1
10
100
1 ms
10 ms
1
1000
V
DS
, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
V
GS
, Gate to Source Voltage (V)
12
10
8
6
4
2
September, 2009
5–7
APTC60DSKM70CT1G – Rev 0
10000
I
D
=39A
T
J
=25°C
V
DS
=120V
V
DS
=300V
V
DS
=480V
1000
100
Crss
10
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
0
0
50
100 150 200
Gate Charge (nC)
250
300
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