TECHNICAL NOTE
High-performance Regulator IC Series for PCs
Ultra Low Dropout
Linear Regulators for PC Chipsets
BD3507HFV
●Description
The BD3507HFV is suited for power supply for chipset bus. Though small in size, BD3507HFV adopts power PKG with
radiation fins, and it therefore can be used for a regulator up to 550mA. Because it adopts Nch MOSFET and can form a
ultra low dropout power supply of R
ON
=300mΩ (TYP), BD3507HFV can compose a high-efficiency system, though it is of a
linear type power supply. The output voltage can be set by VREF terminal and can be synchronized with other power
supply. In addition, it can be used as a high side switch (R
ON
= 300mΩ/lo = 550mA) of low-voltage power supply line.
Because ceramic capacitors can be used for output capacitors, BD3507HFV contributes to downsizing and reduced
thickness not only of IC but also of sets.
●Features
1) Built-in high-accuracy buffer circuit (can be set to 0.65-2.7V)
2) Adoption of ceramic capacitors
3) Built-in enable function (0μA at standby)
4) Built-in current limiting circuit (550mA Max)
5) Built-in undervoltage lockout circuit (UVLO)
6) Built-in thermal shutdown circuit (TSD)
7)
Adoption of ultra-small-size high-power HVSOF6 package (3.0 x 1.6 x 0.75 mm)
●Applications
Notebook PC, desktop PC, digital camera, digital home appliances
Oct. 2008
●ABSOLUTE
MAXIMUM RATINGS (Ta=25℃)
Parameter
Input Voltage1
Input Voltage2
Enable Input Voltage
Power Dissipation1
Power Dissipation2
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
*1 However, not exceeding Pd.
*2 Maximum rating that can stand instantaneous voltage application such as surge, back EMF, or continuous pulse application whose duty ratio lowers 10%.
*3 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 4.1 mW/°C.
*4 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate (copper foil area: 100 mm
2
)), derated at 6.8 mW/°C.
Symbol
V
CC
V
IN
V
EN
Pd1
Pd2
Topr
Tstg
Tjmax
Limit
6.0
6.0
6.0
*1 *2
*1 *2
*1 *2
Unit
V
V
V
mW
mW
℃
℃
℃
512.5
*3
850.0
*4
-10½+100
-55½+150
+150
●OPERATING
CONDITIONS (Ta=25℃)
Parameter
Input Voltage1
Input Voltage2
VREF Setup Voltage
EN Input Voltage
Output Current
Symbol
V
CC
V
IN
V
REF
V
EN
I
O
MIN
4.5
1.2
0.65
-0.3
0
MAX
5.5
Vcc-1
2.7
5.5
550
Unit
V
V
V
V
mA
★
No radiation-resistant design is adopted for the present product.
●ELECTRICAL
CHARACTERISTICS (unless otherwise noted, Ta=25℃, V
CC
=5V, V
IN
=1.8V, V
REF
=1.2V, V
EN
=3V)
Standard Value
Parameter
Bias Current
Standby Current1
Standby Current2
Output Voltage1
Output Voltage2
Output Voltage3
Output Voltage4
Output Voltage5
Symbol
I
CC
I
STB
I
INSTB
V
O
1
V
O
2
V
O
3
Vo4
Vo5
MIN
-
-
-
1.188
1.188
1.176
2.475
2.475
TYP
0.4
0
0
1.200
1.200
1.200
2.500
2.500
MAX
0.7
10
10
1.212
1.212
1.224
2.525
2.525
Unit
mA
μA
μA
V
V
V
V
V
Condition
V
EN
=0V
V
EN
=0V
Io=0mA
Io=300mA
Io=0mA to 550mA
Vcc=4.5V to 5.5V
*5
Ta=-10℃ to 100℃
V
IN
=3.3V,V
REF
=2.5V Io=0mA
V
IN
=3.3V,V
REF
=2.5V
Io=300mA
V
IN
=3.3V,V
REF
=2.5V
Io=0mA to 550mA
Vcc=4.5V to 5.5V
*5
Ta=-10℃ to 100℃
Output Voltage6
Vo6
2.450
2.500
2.550
V
Over Current Protect
Output ON Resistance
High Level Enable Input Voltage
Low Level Enable Input Voltage
Enable Pin Input Current
UVLO OFF Voltage
UVLO Hysteresis Voltage
VREF Pin Bias Current
VREF Discharge ON Resistance
Output Discharge ON Resistance
*5 Design Guarantee
I
CL
R
ON
EN
High
EN
LOW
I
EN
V
UVLO
V
HYS
I
VREF
R
ONREF
R
ONDIS
600
-
2.0
-0.2
-
3.5
100
-0.1
-
-
-
300
-
-
7
3.8
160
-
1.0
0.1
-
550
-
0.8
10
4.1
220
0.1
2.0
0.3
mA
mΩ
V
V
μA
V
mV
μA
kΩ
kΩ
EN:Sweep-up
EN:Sweep-down
V
EN
=3V
Vcc:Sweep-up
Vcc:Sweep-down
V
REF
=0→2.7 V
*5
2/15
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