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SUF30J

Description
Rectifier Diode, 1 Element, 3A, 600V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size65KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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SUF30J Overview

Rectifier Diode, 1 Element, 3A, 600V V(RRM),

SUF30J Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2 V
Maximum non-repetitive peak forward current80 A
Number of components1
Maximum operating temperature150 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.035 µs
surface mountNO
BL
FEATURES
Low cost
GALAXY ELECTRICAL
SUF30G
---
SUF30J
VOLTAGE RANGE:
400
---
600
V
CURRENT:
3.0
A
SUPER FAST RECTIFIERS
R
-
6
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol and
similar solvents
MECHANICAL DATA
Case:JEDEC
R
-
6,
molded plastic
Terminals: Axial lead ,solderable per
MIL-STD202,method 208
Polarity: Color band denotes cathode
Weight: 0.07 ounces,2.1 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,50Hz,resistive or inductive load. For capacitive load,derate by 20%.
SUF30G
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
SUF30J
600
420
600
3.0
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
400
280
400
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
80.0
A
Maximum instantaneous forw ard voltage
@ I
F
=3.0A
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T =25
A
@T
A
=100
(Note1)
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.80
10
100
35
60
25
- 55 ----- + 150
- 55 ----- + 150
2.0
V
A
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0264036
BL
GALAXY ELECTRICAL
1.

SUF30J Related Products

SUF30J SUF30G
Description Rectifier Diode, 1 Element, 3A, 600V V(RRM), Rectifier Diode, 1 Element, 3A, 400V V(RRM),
Is it Rohs certified? conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknown unknown
Configuration SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 2 V 1.8 V
Maximum non-repetitive peak forward current 80 A 80 A
Number of components 1 1
Maximum operating temperature 150 °C 150 °C
Maximum output current 3 A 3 A
Maximum repetitive peak reverse voltage 600 V 400 V
Maximum reverse recovery time 0.035 µs 0.035 µs
surface mount NO NO

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