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HJ667AC

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size34KB,3 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
Download Datasheet Parametric Compare View All

HJ667AC Overview

Transistor

HJ667AC Parametric

Parameter NameAttribute value
MakerHSMC
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)1 A
ConfigurationSingle
Minimum DC current gain (hFE)100
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)20 W
surface mountYES
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2005.07.14
Page No. : 1/3
HJ667A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ667A is designed for low frequency power amplifier.
Absolute Maximum Ratings
(T
A
=25°C)
TO-252
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature .................................................................................................................................... +150
°C
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 20 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage...................................................................................................................... -120 V
BV
CEO
Collector to Emitter Voltage................................................................................................................... -100 V
BV
EBO
Emitter to Base Voltage............................................................................................................................. -5 V
I
C
Collector Current .............................................................................................................................................. -1 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)
*V
BE(on)
*h
FE1
*h
FE2
f
T
Cob
Min.
-120
-100
-5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
12
Max.
-
-
-
-10
-1
-1.5
200
-
-
-
MHz
pF
Unit
V
V
V
uA
V
V
I
C
=-100uA
I
C
=-1mA
I
C
=-10uA
V
CB
=-100V
I
C
=-500mA, I
B
=-50mA
V
CE
=-5V, I
C
=-150mA
V
CE
=-5V, I
C
=-150mA
V
CE
=-5V, I
C
=-500mA
V
CE
=-5V, I
C
=-150mA
V
CB
=-10V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of hFE1
Rank
Range
B
60-120
C
100-200
HJ667A
HSMC Product Specification

HJ667AC Related Products

HJ667AC
Description Transistor
Maker HSMC
Reach Compliance Code unknown
Maximum collector current (IC) 1 A
Configuration Single
Minimum DC current gain (hFE) 100
Maximum operating temperature 150 °C
Polarity/channel type PNP
Maximum power dissipation(Abs) 20 W
surface mount YES

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