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MJ2955

Description
15A, 60V, PNP, Si, POWER TRANSISTOR, TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size146KB,3 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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MJ2955 Overview

15A, 60V, PNP, Si, POWER TRANSISTOR, TO-204AA

MJ2955 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment150 W
Maximum power dissipation(Abs)115 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)2.5 MHz
VCEsat-Max3 V

MJ2955 Related Products

MJ2955 BDX18
Description 15A, 60V, PNP, Si, POWER TRANSISTOR, TO-204AA 15A, 60V, PNP, Si, POWER TRANSISTOR, TO-204AA
Is it Rohs certified? incompatible incompatible
Maker Renesas Electronics Corporation Renesas Electronics Corporation
package instruction FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 15 A 15 A
Collector-emitter maximum voltage 60 V 60 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 5 20
JEDEC-95 code TO-204AA TO-204AA
JESD-30 code O-MBFM-P2 O-MBFM-P2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 200 °C 200 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power consumption environment 150 W 115 W
Maximum power dissipation(Abs) 115 W 117 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 2.5 MHz 0.8 MHz
VCEsat-Max 3 V 1.1 V
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