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MTP10N10ELG

Description
10A, 100V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size786KB,9 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance
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MTP10N10ELG Overview

10A, 100V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN

MTP10N10ELG Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeTO-220AB
package instructionCASE 221A-09, 3 PIN
Contacts3
Manufacturer packaging codeCASE 221A-09
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)50 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.22 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Humidity sensitivity levelNOT SPECIFIED
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)35 A
Certification statusCOMMERCIAL
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
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